Abstract:In this study, the authors investigate the evolution of the structural and electrical properties of ZnO epilayers grown by the metal-organic chemical vapor deposition method on c-sapphire substrates. The inserting of a low-temperature ZnO buffer layer not only significantly improves the structural quality of the high-temperature (HT)-grown ZnO epilayer on a sapphire substrate but also results in high background electron concentration in it from the Hall-effect measurement. After subtracting the conductive contribution from a thin degenerated layer mostly formed between the buffer layer and the substrate based on the two-layer model, the deduced electron-carrier concentration is still in the order of 1018 cm−3, which is much larger than the 1016 cm−3 obtained from capacitance-voltage measurement near the top surface. This indicates that a much thicker layer with high carrier concentration should be formed in the HT-grown ZnO epilayer, which is significantly different from that observed in GaN epitaxy, where only a thin degenerated interfacial layer is suggested to form in the GaN buffer layer. Al atoms’ distribution acquired from secondary-ion mass spectrometry shows a strong dependence on the temperature of the ZnO growth process, indicating that a thermally enhanced diffusion mechanism should be responsible for the observation of the enhanced Al atom concentration in the HT-grown ZnO epilayer. As substituted Al atoms on the Zn site act as donors in ZnO, the one-to-one correspondence between Al content and the carrier concentration, as well as the analysis of temperature-dependent Hall-effect measurement, indicates that diffusion-induced gradient-distributed AlZn shallow donors should be the main origin of the high background-carrier concentration in the HT-grown ZnO epilayers.

Exploring the synergistic effects of aluminum and hydrogen impurities on high-electron-mobility sputtered-ZnO thin films

Influences of Defects Evolvement on the Properties of Sputtering Deposited Zno:Al Films Upon Hydrogen Annealing

Defects Generated by MF Magnetron Sputtering and Their Influences on the Electrical and Optical Properties of Al Doped ZnO Thin Films

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Sputter deposition of hydrogen-doped ZnO layers under humid oxygen plasma

Optimization of Sputtering Parameters for Deposition of Al-doped ZnO Films by Rf Magnetron Sputtering in Ar+H2 Ambient at Room Temperature

Influence of Thermally Diffused Aluminum Atoms from Sapphire Substrate on the Properties of ZnO Epilayers Grown by Metal-Organic Chemical Vapor Deposition

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Investigation of Structural, Electrical, and Optical Properties for Al-Doped ZnO Films Deposited at Different Substrate Temperatures and H2Ratios

Hydrogen incorporation induced metal-semiconductor transition in ZnO:H thin films sputtered at room temperature

Enhanced Photocurrent and Photocatalytic Properties of Porous ZnO Thin Film by Ag Nanoparticles

Effects of Hydrogen Flux on Aluminum Doped Zinc Thin Films by Pulsed Magnetron Sputtering

Oxygen Interstitial Mediated Effective Doping of Al in ZnO:Al Films Prepared by Magnetron Sputtering

Tailoring the Morphology, Optical and Electrical Properties of DC-sputtered ZnO:Al Films by Post Thermal and Plasma Treatments

Influence of Low Sputtering Pressure on Structural, Electrical and Optical Properties of Al-Doped Zinc Oxide Thin Films

The Influences of High Energetic Oxygen Negative Ions and Active Oxygen on the Microstructure and Electrical Properties of ZnO:Al Films by MF Magnetron Sputtering

Effects of substrate temperature on the efficiency of hydrogen incorporation on the properties of Al-doped ZnO films

Theoretical study on the interaction of p-type impurities with hydrogen in ZnO

Ellipsometric Study on Optical Properties of Hydrogen Plasma-Treated Aluminum-Doped ZnO Thin Film

Aluminum's role in tailoring the characteristics of room temperature co-sputtered gadolinium and aluminum-doped ZnO thin films

Influence and Mechanism of H-2 in the Epitaxial Growth of Zno Using Metal-Organic Chemical Vapor Deposition Method