Hall effect analysis of boron and nitrogen background concentration in undoped CVD diamond

D. D. Prikhodko,V. O. Timoshenko,S. A. Tarelkin,N. V. Kornilov,N. V. Luparev,A. V. Golovanov,T. E. Drozdova,V. D. Blank

DOI: https://doi.org/10.1063/5.0197107

IF: 4

2024-07-22

Applied Physics Letters

Abstract:Pure single crystal diamond is a superior material for electronic, quantum, and detection applications. The state-of-the-art level of background concentrations of boron and nitrogen in such diamonds is about 1 ppb, which is quite close to the detection limit of the best chemical analysis techniques. In this work, we show that the boron concentration of ∼0.1 ppb causes conductivity of ∼5 kΩ cm of the single crystal diamond if the nitrogen concentration is lower. In such a case, the temperature dependent Hall effect measurement provides ∼100 times better detection limit for the concentration of the impurities in diamond compared to the conventional optical techniques. As a result, we have found the background concentrations of boron and nitrogen at the level of 0.07 and 0.02 ppb, respectively. This fact leads to a conclusion that growth of the insulating diamond is possible only when the nitrogen concentration is higher than the boron concentration.

physics, applied