Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4
Hyunsue Kim,Mengke Liu,Lisa Frammolino,Yanxing Li,Fan Zhang,Woojoo Lee,Chengye Dong,Yi-Fan Zhao,Guan-Yu Chen,Pin-Jui Hsu,Cui-Zu Chang,Joshua Robinson,Jiaqiang Yan,Xiaoqin Li,Allan H. MacDonald,Chih-Kang Shih
2023-09-12
Abstract:Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials.
Materials Science,Mesoscale and Nanoscale Physics