Abstract:The idea of combining different two-dimensional (2D) crystals in van der Waals heterostructures (vdWHs) has led to a new paradigm for band structure engineering with atomic precision. Due to the weak interlayer couplings, the band structures of the individual 2D crystals are largely preserved upon formation of the heterostructure. However, regardless of the details of the interlayer hybridisation, the size of the 2D crystal band gaps are always reduced due to the enhanced dielectric screening provided by the surrounding layers. The effect can be on the order of electron volts, but its precise magnitude is non-trivial to predict because of the non-local nature of the screening in quasi-2D materials, and it is not captured by effective single-particle methods such as density functional theory. Here we present an efficient and general method for calculating the band gap renormalization of a 2D material embedded in an arbitrary vdWH. The method evaluates the change in the GW self-energy of the 2D material from the change in the screened Coulomb interaction. The latter is obtained using the quantum-electrostatic heterostructure (QEH) model. We benchmark the G$\Delta$W method against full first-principles GW calculations and use it to unravel the importance of screening-induced band structure renormalisation in various vdWHs. A main result is the observation that the size of the band gap reduction of a given 2D material when inserted into a heterostructure scales inversely with the polarisability of the 2D material. Our work demonstrates that dielectric engineering \emph{via} van der Waals heterostructuring represents a promising strategy for tailoring the band structure of 2D materials.

Rigid band shifts in two-dimensional semiconductors through environmental screening

Tailoring the dielectric screening in WS$_2$-graphene heterostructures

Effects of dielectric screening on the excitonic and critical points properties of WS<sub>2</sub>/MoS<sub>2</sub> heterostructures

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors

Quasiparticle band structure engineering in van der Waals heterostructures via dielectric screening

Controlled dynamic screening of excitonic complexes in 2D semiconductors

Non-invasive control of excitons in two-dimensional materials

Spectroscopic Studies Of The Effects Of 2-Dimensional Electron-Gas On Interband-Transitions

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

Asymmetric Electric Field Screening in van der Waals Heterostructures

Dielectric screening effect on exciton resonance energy in monolayer WS2 on SiO2/Si substrate

Band structure engineering of 2D materials using patterned dielectric superlattices

Strain-engineered growth of two-dimensional materials

Dynamical screening effects of substrate phonons on two-dimensional excitons

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Effects of dynamical dielectric screening on the excitonic spectrum of monolayer semiconductors

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Electrical detection of the flat band dispersion in van der Waals field-effect structures

Quenching the bandgap of two-dimensional semiconductors with a perpendicular electric field