Abstract:We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with little change to the electronic dispersion of the band structure. These essentially rigid shifts of the bands results from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment in the 2D limit. Our results suggest dielectric engineering as a non-invasive method of tailoring the band structure of 2D semiconductors and provide guidance for understanding the electronic properties of 2D materials embedded in multilayer heterostructures.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of environmental medium shielding effect on the electronic band structure and band gap of two - dimensional semiconductor materials (especially monolayer WS₂). Specifically, the researchers hope to combine experimental and theoretical methods to reveal how the change in the dielectric constant of the external environment affects the band structure of these materials and to explore whether this influence can be regulated by changing the dielectric environment around the materials. ### Main problems 1. **Influence of environmental medium shielding on electron dispersion and band gap**: - The researchers studied the influence of environmental medium shielding on the electronic band structure and band gap of monolayer WS₂ by using angle - resolved photoemission spectroscopy (ARPES) and optical spectroscopy combined with first - principles calculations. - They found that as the environmental dielectric constant increases, the main effect is the decrease in the band gap, while the electron dispersion hardly changes. These changes are manifested as rigid shifts of the bands, which are due to the special spatial structure caused by the change in the Coulomb potential in the 2D limit. 2. **Non - invasive regulation method**: - By changing the dielectric environment around the material, the regulation of the band gap and exciton binding energy of 2D semiconductor materials can be achieved. This method provides a new way for designing nanostructures with specific functions, such as lateral heterojunctions. ### Key conclusions - **Band - gap regulation**: Changes in the environmental dielectric constant will lead to significant changes in the band gap. For example, in two different dielectric environments of hBN and graphite, the band - gap difference of monolayer WS₂ is about 140 meV. - **Rigid translation**: The main effect of environmental medium shielding is the rigid translation of the bands, rather than the change in the band shape. This translation is symmetric in the valence band and the conduction band and remains consistent throughout the Brillouin zone. - **Non - local shielding effect**: The non - local shielding characteristics in 2D materials lead to an almost constant change in the Coulomb potential, so that the band gap is symmetrically opened and closed. ### Application prospects - The research results provide guidance for understanding the electronic properties of 2D materials embedded in multi - layer heterostructures and show the possibility of non - invasively regulating the band gap of 2D semiconductor materials through dielectric engineering, which is of great significance for the development of new electronic devices. ### Formula display Some of the key formulas involved in the paper are as follows: 1. **Self - energy correction**: \[ \Sigma_{\lambda}^{G\Delta W}(k, \omega)=\frac{i}{2\pi}\int dq\int d\omega'\frac{\Delta W_{\epsilon}(q, \omega')}{\omega+\omega'+i\delta - E_{\lambda}^{k - q}} \] 2. **Quasiparticle dispersion relation**: \[ E_{\lambda}^{k, \epsilon}=E_{\lambda}^{k, \epsilon = 1}+\gamma_{\epsilon}\left[n_F(E_{\lambda}^{k, \epsilon = 1})-\frac{1}{2}\right] \] 3. **Coulomb potential change**: \[ \Delta W_{\epsilon}(\rho)=W_{\epsilon}(\rho)-W_V(\rho) \] These formulas describe the specific influence of the change in the environmental dielectric constant on the electronic structure of 2D materials and how to verify the experimental results through theoretical calculations.

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