Abstract:Excitons, bound electron–hole pairs in a 2D plane, dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). A large exciton binding energy on the order of 0.5 eV was theoretically predicted and experimentally determined recently. These ultrastable excitons thus open an avenue to explore the exciton physics such as Bose–Einstein condensation and superfluidity at room temperature (Kasprzak et al 2006 Nature 443 409; Plumhof et al 2014 Nat. Mater. 13 247; Fogler et al 2014 Nat. Commun. 5 4555; Jiang and John 2014 Sci. Rep. 4 7432). Recent experiments further demonstrated the concept of Coulomb engineering via dielectric environments based on either solutions or few-layer graphene. However, the conducting nature of these dielectrics can lead to quenching of optical transitions. Thus, in order to utilize ‘dielectric tuning’ of the exciton binding energy and quasiparticle band gaps, one must use insulating dielectrics. Here, we investigate the impact of insulating dielectric environments on the exciton binding energy of monolayer WS2 and WSe2 by exciton Rydberg spectroscopy, in which the dielectric environment is systematically varied from κ = 1.49 to 3.82. We found that, with increasing κ value, the exciton binding energy and quasiparticle bandgap exhibit significant reductions. Quantitatively, our result follows the prediction of nonlocally-screened Keldysh potential very well. The fitted 2D polarizability, , agrees rather well with previous density function theory calculations. Their close agreement validates the nonlocally screened Keldysh model which can be used to quantitatively predict the exciton binding energy for monolayer TMDs (and possibly other 2D materials) in different dielectric environments. Such a predictive model will play an important role for the design of van der Waals heterostructures and TMD-based optoelectronic devices.

Dielectric screening effect on exciton resonance energy in monolayer WS2 on SiO2/Si substrate

Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2

Effects of dielectric screening on the excitonic and critical points properties of WS<sub>2</sub>/MoS<sub>2</sub> heterostructures

Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2

Quantized exciton-exciton annihilation in monolayer WS2 on SrTiO3 substrates with atomically flat terraces

Band structure and excitonic properties of WSe$_2$ in the isolated monolayer limit in an all-electron approach

Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2.

Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study

Effects of dynamical dielectric screening on the excitonic spectrum of monolayer semiconductors

Controlled dynamic screening of excitonic complexes in 2D semiconductors

Anomalous Non-Hydrogenic Exciton Series in 2D Materials on High-$κ$ Dielectric Substrates

Binding energy of exciton in monolayer semiconductor WS2 with Yukawa-like screening potential

Electron energy-loss spectrum and exciton band structure of ${\mathrm{WSe}}_{2}$ monolayer studied by ab initio Bethe-Salpeter equation calculations

Dynamical screening effects of substrate phonons on two-dimensional excitons

Tailoring the dielectric screening in WS$_2$-graphene heterostructures

Exploration Of Exciton Behavior In Atomically Thin Ws2 Layers By Ionic Gating

Time-dependent screening explains the ultrafast excitonic signal rise in 2D semiconductors

Fractional Dimensional Approach to Dielectric Tuning Effects on Excitonic Parameters in 2D semiconductor materials

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Many-body exciton and inter-valley correlations in heavily electron-doped WSe$_2$ monolayers

Rigid band shifts in two-dimensional semiconductors through environmental screening