Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides

K. Terashima,Y. Yano,E. Paris,Y. Goto,Y. Mizuguchi,Y. Kamihara,T. Wakita,Y. Muraoka,N. L. Saini,T. Yokoya
DOI: https://doi.org/10.1063/1.5087096
2019-03-28
Abstract:Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS$_{2-x}$Se$_x$ thermoelectric material. It is found that Se substitution effectively suppresses local distortion, that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.
Materials Science
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