Thermoelectric properties of new Bi-chalcogenide layered compounds

Yoshikazu Mizuguchi,Atsuhiro Nishida,Atsushi Omachi,Osuke Miura

DOI: https://doi.org/10.1080/23311940.2016.1156281

2016-02-17

Abstract:The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric properties. Finally, the possible strategies for enhancing the thermoelectric performance are discussed on the basis of the experimental and the theoretical facts reviewed here.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop new - type layered Bi - chalcogenide as high - performance thermoelectric materials. Specifically, the author focuses on the crystal structure changes of these compounds and their thermoelectric properties, and explores possible strategies to improve the thermoelectric properties (especially the ZT value) of these materials.

### Background and Objectives of the Paper

1. **Importance of Thermoelectric Conversion Technology**
- Thermoelectric energy conversion technology is a very promising technology that can directly convert waste heat into electrical energy, which is helpful for solving energy problems.
- The currently available thermoelectric materials have limited performance, and high - performance thermoelectric materials need to be developed.

2. **Evaluation Index of Thermoelectric Properties**
- The performance of thermoelectric materials is usually evaluated by the dimensionless figure of merit (ZT), and the calculation formula is \( ZT=\frac{S^{2}T}{\rho\kappa} \), where \( S \) is the Seebeck coefficient, \( T \) is the absolute temperature, \( \rho \) is the resistivity, and \( \kappa \) is the thermal conductivity.
- High - performance thermoelectric materials need to have a large Seebeck coefficient, low resistivity, and low thermal conductivity.

3. **Limitations of Existing Thermoelectric Materials**
- Insulators or semiconductors with large band gaps usually have a large Seebeck coefficient but high resistivity.
- Metal compounds have low resistivity but a small Seebeck coefficient.
- This trade - off relationship makes it very difficult to optimize the Seebeck coefficient and resistivity simultaneously.

4. **Advantages of Layered Bi - chalcogenide**
- Layered Bi - chalcogenide has rich crystal structure and compositional element changes, and is expected to develop new physical and chemical properties.
- These compounds have already shown relatively high thermoelectric properties (for example, LaOBiSSe has a ZT value of 0.36 at about 650 K).
- The layered structure provides a way to reduce thermal conductivity by scattering phonons at the interface to reduce heat conduction.

### Research Contents

1. **Crystal Structure Changes**
- The paper describes in detail the crystal structures of different types of layered Bi - chalcogenide, including BiS2 - based compounds, Eu3F4Bi2S4, Bi4O4SO4Bi2S4, etc.
- The crystal structures of these compounds can be flexibly adjusted by changing the barrier layer structure and element substitution.

2. **Research on Thermoelectric Properties**
- Focus on the thermoelectric properties of LaOBiS2 - based compounds, including LaO1 - xFxBiS2 and LaOBiS2 - xSex.
- The resistivity, Seebeck coefficient, and power factor (PF) are measured experimentally, and the effects of F substitution and Se substitution on thermoelectric properties are discussed.
- It is found that Se substitution can significantly improve the thermoelectric properties of LaOBiS2 - xSex, especially at high temperatures.

3. **Thermoelectric Properties of Other Layered Bi - chalcogenide**
- The thermoelectric properties of CeO1 - xFxBiS2, NdO1 - xFxBiS2, EuFBiS2, and LaOBiPbS3 and other compounds are studied.
- It is found that the thermoelectric properties of these compounds are affected by multiple factors, including mixed valence states, element substitution, and changes in lattice parameters.

### Conclusions and Future Directions

1. **Summary**
- Layered Bi - chalcogenide has the advantage of low thermal conductivity, and its thermoelectric properties can be optimized by structural adjustment and element substitution.
- The parent compound with low carrier concentration is more conducive to obtaining a high power factor.

2. **Future Strategies**
- Explore new material systems to further improve the power factor.
- Reduce thermal conductivity by introducing disorder (such as Se substitution).
- Optimize carrier concentration and balance the relationship between the Seebeck coefficient and resistivity.

In short, this paper aims to reveal the thermoelectric properties of layered Bi - chalcogenide through systematic research and propose effective strategies to improve its thermoelectric properties.