Abstract:Liquid-phase epitaxy (LPE) is one of the best techniques for the preparation of single crystal garnet films. However, the specific Faraday rotation angle of Yttrium iron garnet (YIG) is small, and its easy magnetization axis is parallel to the film surface. The YIG requires a large external saturation field, which cannot meet the development needs of magneto-optical devices. It is found that Bi-substituted YIG(Bi:YIG) film has a larger specific Faraday angle. By adjusting the easy magnetization axis of Bi: YIG perpendicular to the film surface, the saturation magnetization of Bi: YIG can be reduced, so that it can work under a small external magnetic field. This meets the development needs of miniaturization and energy saving of magneto-optical device. The saturation magnetization of garnet film can be effectively reduced by substituting Ga3+ for YIG crystal, mainly for Fe3+ at the 24d position of its tetrahedron. And the lattice constants of Gd3Ga5O12 (GGG) and YIG are 1.2383 nm and 1.2376 nm, respectively. However, the radius of Bi3+ (10.8 nm) is larger than that of Y3+ (9.0 nm), the lattice mismatch of garnet film increases with the incorporation of Bi3+. In order to neutralize the lattice expansion caused by Bi3+, Tm3+ (8.69 nm) with a radius smaller than that of Y3+ (9.0 nm) is selected. Based on the theoretical analysis of the magnetocrystalline anisotropy of garnet film, (BiTm)3(GaFe)5O12 mono-crystalline films with different growth temperatures and different thickness values are grown by LPE on GGG (111) substrates. The experimental results show that when the thickness of epitaxial film is greater than 1 μm, the influence of shape anisotropy on magnetocrystalline anisotropy can be ignored. With the increase of growth temperature, the substitution number of Bi3+ ions decreases gradually, the lattice constant of epitaxial film decreases gradually, and the lattice mismatch first decreases and then increases. Then, the state of compressive stress gradually changes into that of tensile stress. Compared with growth-induced anisotropy, the stress-induced anisotropy is dominant in the change of magnetocrystalline anisotropy. The Verdet constant of (BiTm)3(GaFe)5O12 film is 11.8 × 104 rad/Tm@1064 nm. The results show that the prepared (BiTm)3(GaFe)5O12 mono-crystalline films have great development potential in magneto-optical devices.

Effects of post-deposition annealing on the structure and magnetization of PLD grown Yttrium Iron Garnet films

Pulsed Laser Deposition Grown Yttrium-Iron-garnet Thin Films: Effect of Composition and Iron Ion Valences on Microstructure and Magnetic Properties

Optimizing the Quality of Epitaxial Y3Fe5O12 Thin Films Via a Two-Step Post-Annealing Process

Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

Effect Of Post-Annealing On The Magnetic Properties Of Bi : Yig Film By Rf Magnetron Sputtering On Si Substrates

Control of magnetization dynamics by substrate orientation in YIG thin films

The Magnetic and Magneto-optical Properties of Heavily Bi-Doped YIG (bi: YIG) Sputtering Film Annealed by RTA Method

Laser patterning of magnonic structure via local crystallization of Yittrium Iron Garnet

Long Time Annealing Effects on the Microstructures of the Sol–gelderived Nanocrystalline Thin Films of Rare Earthstabilized Zirconia

Tuning of perpendicular magnetic anisotropy in Bi-substituted yttrium iron garnet films by He$^+$ ion irradiation

Chemical Epitaxial Growth of Nm-Thick Yttrium Iron Garnet Films with Low Gilbert Damping

Role of Cerium Doping on Epitaxial Yttrium Iron Garnet Thin Films

Effects Of Off-Stoichiometry And Density On The Magnetic And Magneto-Optical Properties Of Yttrium Iron Garnet Films By Magnetron Sputtering Method

The Room Temperature Deposition of High-Quality Epitaxial Yttrium Iron Garnet Thin Film Via RF Sputtering

Growth of Phase Pure Yttrium Iron Garnet Thin Films on Silicon: the Effect of Substrate and Post Deposition Annealing Temperatures

Origin of high-frequency magnetic loss of Y3Fe5O12 single crystal thin films prepared with high-throughput screening by magnetron sputtering

Robust perpendicular magnetic anisotropy in Ce substituted yttrium iron garnet epitaxial thin films

Preparation and Orientation Mechanism Analysis of (bitm)3(gafe)5o12 Magneto-Optical Single Crystal Film with Out-of-plane Orientation

Structure Dependence of Magnetic Properties in Yttrium Iron Garnet by Metal-Organic Decomposition Method

Evolution of microstructure, magnetic and microwave properties of sputter deposited polycrystalline YIG thin films

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material