Microstructure and magnetic properties of epitaxial YIG thin films prepared by RF magnetron sputtering
Hehai Long,Xue Wang,Zeyi Zhu,Yafan Wan,Xiaomeng Wang,Zhijie Cao,Lili Lang,Tao Wang,Fu Zheng,Li Ma
DOI: https://doi.org/10.1007/s10854-024-13824-6
2024-11-29
Journal of Materials Science Materials in Electronics
Abstract:The effects of sputtering Ar pressure, annealing temperature and sputtering power on the microstructure and magnetic properties of YIG thin films prepared by RF magnetron sputtering are systematically investigated. It is found that epitaxial YIG film prepared under Ar pressure of 4 mTorr, sputtering power of 180 W and annealing at 750 °C exhibits relatively superior soft magnetic properties with a high saturation magnetization of 118 emu/cm 3 , small coercivity of 0.22 Oe and surface roughness of 0.36 nm. TEM analysis confirms the formation of a good epitaxial structure in this YIG film. The in-plane uniaxial anisotropy energy is estimated to be 316 erg/cm 3 based on the angular dependence of resonance field, which ranges from 316.26 to 320.18 Oe. Additionally, the resonance linewidth is found to range from 8.37 to 8.58 Oe, displaying an anisotropic characteristics, which may be attributed to the ferromagnetic resonance (FMR) mode of short wavelength spin waves. This work provides valuable insights for the design and fabrication of epitaxial YIG thin films, relevant for microwave and next-generation spintronic devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied