Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Foundry fabricated compact slow-light Mach-Zehnder modulator and photodetector for on-chip analog photonic computing

Electro‐Optic Modulators: On‐Chip Dual Electro‐Optic and Optoelectric Modulation Based on ZnO Nanowire‐Coated Photonic Crystal Nanocavity (advanced Optical Materials 17/2018)

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Ultracompact Electrooptic Silicon Modulator With Horizontal Photonic Crystal Slotted Slab

Silicon Photonic Network-on-chip and Enabling Components

Study of Silicon Photonics Based on Standard CMOS Foundry

Design and fabrication of a monolithic optoelectronic integrated circuit chip based on CMOS compatible technology

Silicon Based Ultra-Compact Modulator with Photonic Crystal

Polymer-based Hybrid Integrated Photonic Devices for Silicon On-chip Modulation and Board-level Optical Interconnects

Integrated electro-optic digital-to-analog link for efficient computing and arbitrary waveform generation

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Modeling and experimental characterization of a compact Mach–Zehnder electro-optic modulator on the SOI

High-speed, low-voltage, low-bit-energy silicon photonic crystal slow-light modulator with impedance-engineered distributed electrodes

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

High-speed photonic crystal modulator with non-volatile memory via structurally-engineered strain concentration in a piezo-MEMS platform

Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth

Recent Progress in Silicon-Based Slow-Light Electro-Optic Modulators

High-Speed Multifunctional Photonic Memory on a Foundry-Processed Photonic Platform

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics