Abstract:Edge-defined Film-fed Growth (EFG) is a promising technology for production of silicon wafers with minimum loss of silicon material for photovoltaic applications. The growth of the hollow tubes by the EFG method is a very high temperature gradient along the direction of tube growth at the melt-solid interface. As this high temperature gradient is necessary to sustain the high speed of silicon growth through dissipating latent heat at the melt-solid interface, it generates substantial amount of thermal stresses that are associated with defect generation and defaituation of the structure. With increase of the tube diameter and reduction of wall thickness, the large thermal stresses lead to significant buckling of the tube.In this study, the buckling behavior of the growing silicon tube is studied experimentally by monitoring deflection of two pairs of opposite faces of an octagonal tube during the growth. Four capacitance sensors were placed on a fixed plane normal to the translation of the tube to measure the varying thickness of the air between the sensor and the tube surface throughout the tube growth. The recorded data reveal the buckling behavior of tubes for several growth runs. Despite the different growth conditions in the EFG systems, similar patterns of buckling behavior have been observed in octagonal silicon tubes with face width of 12.5 cm. A typical buckling pattern observed can be divided into three distinctively different stages, namely seed holder-influenced stage, tube growth stage, and a random fluctuation stage. Each stage has different amplitude of deflection and covers different length of the tube. More interestingly, the recorded surface deflection reveals the displacement of the center of the tube, suggesting off-centered growth and possible instability of the meniscus. It is considered that these mechanisms may contribute to the special buckling pattern observed during growth.

An axis symmetric 2D description of the process of the growth of a single crystal Si tube growth from the melt by pulling down method. Part1

Technology and Thermomechanics in Growing Tubular Silicon Single Crystals

Experimental Study Of Buckling Behavior Of Octagonal Thin Walled Silicon Tube Grown By Edge-Defined Film-Fed Method

Effects of Pulling Velocity on Interface Dynamics and Solute Segregation During Crystal Growth

Theoretical Analysis of the Shape Evolution of Crystals Grown by Pulling

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Silicon Single Crystal Growth by Continuous Growth Method

Spontaneous Assembly and Real-Time Growth of Micrometre-Scale Tubular Structures from Polyoxometalate-Based Inorganic Solids.

Diameter-Controlled Czochralski Growth of Silicon Crystals

Bubble guidance of tubular growth in reaction-precipitation systems

Meniscus Dynamics and Melt Solidification in the EFG Silicon Tube Growth Process

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method

A Self-Growing Strategy for Large-Scale Crystal Assembly Tubes

Growth of Curved Crystals: Competition Between Topological Defect Nucleation and Boundary Branching.

One-dimensional Growth Induced by Thermal Stress

Growth Mechanism And Dynamics Of In-Plane Solid-Liquid-Solid Silicon Nanowires

Growth Angle and Melt Meniscus of the RF-heated Floating Zone in Silicon Crystal Growth

Surface growth for molten silicon infiltration into carbon millimeter-sized channels: Lattice-Boltzmann simulations, experiments and models

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Crystal growth from a supersaturated melt: relaxation of the solid-liquid dynamic stiffness

Effect of the ceramic tube shape on global heat transfer, thermal stress and crystallization front in low thermal gradient (LTG) Czochralski growth of scintillating BGO crystal