Abstract:This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

A Study of Lateral Schottky Contacts in WSe2 and MoS2 Field Effect Transistors Using Scanning Photocurrent Microscopy.

Epitaxial van der Waals contacts for low schottky barrier MoS 2 field effect transistors

CVD Graphene Contacts for Lateral Heterostructure MoS_2 Field Effect Transistors

Analytical photoresponses of Schottky contact MoS2 phototransistors

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Schottky Contact in Monolayer WS2 Field‐Effect Transistors

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt(Ni)-MoS2 and Bi-MoS2(WSe2) as the prototype

Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts