Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Luca Bignardi,Daniel Lizzit,Harsh Bana,Elisabetta Travaglia,Paolo Lacovig,Charlotte E. Sanders,Maciej Dendzik,Matteo Michiardi,Marco Bianchi,Moritz Ewert,Lars Buß,Jens Falta,Jan Ingo Flege,Alessandro Baraldi,Rosanna Larciprete,Philip Hofmann,Silvano Lizzit
DOI: https://doi.org/10.1103/PhysRevMaterials.3.014003
2018-09-20
Abstract:We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
Materials Science,Mesoscale and Nanoscale Physics
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