Abstract:Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mode. Application of positive gate voltage results in accumulation of electrons in the “n-type” BixSe1-x layer resulting in an increase of conductivity. In order to explain the drain current-gate voltage behavior, we used a simple polynomial model to describe the change in the device characteristics due to charge traps. The model was fitted with our experimental results. We further analyzed the gate leakage current, which showed a good match with trap-assisted tunneling (TAT) process that was used to derive trap parameters. The obtained trap parameters show the presence of ultra-deep charge traps contributing to the hysteretic behavior.Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mo...

Role of Charge Traps in the Performance of Atomically-Thin Transistors

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

A quantum model of charge capture and release onto/from deep traps

Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors

Impact of Trap Profile on the Characteristics of 2-D MoS 2 Memtransistors: A Simulation Study

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.

Transient current responses of organic electrochemical transistors: Evaluating ion diffusion, chemical capacitance, and series elements

Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory