Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells

Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips

DOI: https://doi.org/10.48550/arXiv.1701.05368

2017-01-19

Abstract:We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity v_I at the PEDOT:PSS/c-Si interface. An estimated v_I of ~ 400 m/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.

Other Condensed Matter

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the application potential of poly(3,4 - ethylenedioxythiophene) - poly(styrenesulfonate) (PEDOT:PSS) as a hole - selective front - contact material for silicon heterojunction solar cells (SHJ). Specifically, the researchers hope to evaluate whether PEDOT:PSS can improve the power conversion efficiency (PCE), especially the performance of open - circuit voltage (VOC) of single - crystal n - type silicon (c - Si) solar cells when used in combination with a high - performance electron - selective back - contact (based on amorphous silicon a - Si).

Through experiments, the researchers found that when using PEDOT:PSS as the front - contact material and combining it with an optimized a - Si back - contact, a PCE as high as 14.8% can be achieved, and the VOC exceeds 660 mV. In addition, the study also explored the recombination velocity at the PEDOT:PSS/c - Si interface and the current density loss due to the parasitic absorption and reflection of PEDOT:PSS, thereby pointing out the potential ways to further improve the performance of PEDOT:PSS as a front - contact material for SHJ solar cells by improving the interface passivation quality and reducing optical losses.

The key issues mentioned in the paper include:
1. **Improving solar cell efficiency**: Improve the overall efficiency of solar cells by optimizing the performance of PEDOT:PSS as a front - contact material.
2. **Evaluating interface recombination velocity**: Estimate the recombination velocity at the PEDOT:PSS/c - Si interface through experimental data to understand its impact on device performance.
3. **Reducing optical losses**: Analyze and quantify the current density loss due to the parasitic absorption and reflection of PEDOT:PSS and propose improvement measures.

These research results not only help to understand the application potential of PEDOT:PSS in SHJ solar cells, but also provide an important reference for the future development of high - performance organic - inorganic hybrid solar cells.