Electron Lifetime Determination in Semiconductor Gamma Detector Arrayes

Uri Lachish

DOI: https://doi.org/10.13140/RG.2.2.30554.13762

2017-01-12

Abstract:Hecht equation is not adequate to analyzing standard measurements, of the mobility-lifetime product, carried out with single pixels of detector arrays. A modified expression is calculated, in order to have correct mobility-lifetime values out of experimental data.

Instrumentation and Detectors

What problem does this paper attempt to address?

The Modified Hecht Equation for Pixel Detectors: A Methodological Approach to Evaluating Mobility-Lifetime Products

Rui Wu,Yang Kng,Donghai Fan,Peizheng Li,Yingrui Li,Dengke Wei,Sen Wu,Tingting Tan,Gangqiang Zha,Yang Kang

DOI: https://doi.org/10.1109/tns.2024.3355242

IF: 1.703

2024-03-19

IEEE Transactions on Nuclear Science

Abstract:In this article, we propose a modified Hecht equation tailored for pixel detectors. Building upon the Shockley-Ramo theorem and the fundamental principles of the classic Hecht equation, our approach incorporates consideration for the nonlinear weighting of the electric field. The improved Hecht equation is designed to accurately model the mobility-lifetime product of carriers in pixel detectors under both low-energy and high-energy photon irradiation. In comparison to conventional methods based on the plane Hecht relation, our approach aligns more closely with the charge collection model of the pixel detector. Notably, it eliminates the restriction that the radiation used for mobility-lifetime product fitting must be deposited solely on the detector surface. This flexibility is particularly beneficial for evaluating detector performance postpackaging and integration. We validated our approach using an CdZnTe pixel detector, featuring an electrode area of mm and a thickness of 15 mm. The mobility-lifetime product of electrons and holes was successfully determined under both 59.5- and 661.6-keV photon irradiation. Strikingly, the fitting results from different radioactive sources exhibited high consistency, affirming the reliability of the improved Hecht equation. Finally, we compared the fitting results of the carrier mobility-lifetime product obtained in this study with the results obtained using the traditional Hecht equation and other results obtained in pixel detectors and analyzed the reliability of the results.

engineering, electrical & electronic,nuclear science & technology
The Measurement Of Optoelectrons Lifetime In Imaging Process Of Silver Halide Material

Gs Fu,Sp Yang,Xw Li,Xy Hu

DOI: https://doi.org/10.1117/12.445752

2001-01-01

Abstract:The optoelectron lifetimes in imaging process are directly related to photographic efficiency of silver halide emulsion. The lifetime of the free electrons and shallow trapped electrons decide the sensitivity and other efficiency of silver halide emulsion. Modern emulsion technology uses the incorporation of well-defined phase boundaries in emulsion crystals to reduce the recombination rate of optoelectrons and optoholes after actinic exposure. This process leads to an enhanced photographic efficiency due to the increasing optoelectron lifetime. Microwave absorption and dielectric spectrum detection technology is a powerful tool that could quickly detect the change of dielectric function of emulsion film. This technology enables contactless measurement of the optoelectron lifetime. YAG super-fast pulse laser (355nm, 35ps) is used as an exposure source. Signals of the free optoelectrons and shallow trapped electrons are the decay curve versus the time. The concentration of the optoelectrons depends on the maximum concentration and decay rate constant. The reciprocal of the slop of this straight line is the lifetime of the optoelectrons. The lifetime and decay curve of the free optoelectrons and shallow trapped electrons of different emulsion samples have been measured and analyzed.
Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

M. W. Gerber,R. N. Kleiman

DOI: https://doi.org/10.1063/1.5001128

IF: 2.877

2017-09-07

Journal of Applied Physics

Abstract:In this work, we show that extraction of the true bulk lifetime from the biexponential decay that follows from low initial carrier density photoluminescence decay experiments is not generally possible, and introduce new models to enable extraction of the bulk lifetime in the case where the initial carrier density exceeds the doping level. From measurements with high initial carrier density, we establish quasi-equilibrium between localized and free carrier states and accurately measure the bulk lifetime. Using our new models, we measure the time constants associated with localization processes as well as nonradiative and radiative bulk recombination in our GaAs double heterostructures grown with molecular beam epitaxy from experiments with varied excitation strength providing initial carrier densities that range from around 1014 to 1017 cm–3. We demonstrate that this approach can be applied to lightly doped (1016 cm–3) materials where the strongest excitation yields initial carrier densities that exceed the doping level. In our n-type sample, we report lifetime values of (22.7 ± 0.1) ns for bulk recombination, (73 ± 1) ns for trap-capture, (51 ± 2) ns for trap-emission, and (63 ± 2) ns for trap-decay, with a low-level injection effective radiative efficiency of (27.5 ± 0.7)%. In our p-type sample, we report lifetime values of (78.9 ± 0.3) ns for bulk recombination, (77.5 ± 0.7) ns for trap-capture, (530 ± 10) ns for trap-emission, and (177 ± 4) ns for trap-decay, with a low-level injection effective radiative efficiency of (47.0 ± 0.8)%. In comparison with the long and short lifetimes extracted from the biexponential decay with weak excitation, the mean bulk lifetime measured with strong excitation was (33 ± 2)% and (53 ± 1)% longer than the short lifetime, and (68 ± 4)% and (103 ± 3)% shorter than the long lifetime in our n-type and p-type samples, respectively. In our n-type sample, the extracted low-level injection nonradiative lifetime was (33 ± 1) ns, and it was observed to remain constant with the injection level. In our p-type sample, the high-level injection nonradiative lifetime was measured to be (30 ± 30)% larger than the low-level injection nonradiative lifetime of (140 ± 2) ns.

physics, applied
Hand-Held Gamma Detector Based on High-Pressure Xenon Gas: Determination of Charge Carrier Lifetime in Xe

V. Kutny,A. Rybka,A. Pudov,A. Abyzov,S. Sokolov,L. Davydov,S. Melnikov,G. Kholomyeyev,K. Kutny,I. Kolodiy,R. Austin,U. Rohatgi

DOI: https://doi.org/10.1007/978-94-024-2021-0_21

2020-01-01

Abstract:The primary goal of the work is the design and construction of the hand-held gamma detector based on high-pressure xenon (HPXe). The primary use of the detector with spectrometric capabilities is the detection and identification of radioactive materials in the normal stream of commerce at rail terminals, seaports, border crossings. The advantages of the detectors are high resolution, light weight, robustness, radiation and temperature stability. A major part in reaching the project’s final goal is creation of a Xe purification facility. Xenon gas compressed up to pressure ~50 bar and sometimes doped with hydrogen, methane or others gases, which is the working medium for the high-resolution HPXe detectors, needs to be very pure. The purity level can be measured directly or, alternatively, the gas usability in gamma-spectrometers can be evaluated indirectly through the charge carrier (electron) lifetime measurements. Typically, lifetime determination methods involve the measurement and analysis of individual ionization pulses from particles registered in a Xe-filled ionization chamber. In the present paper, we studied the HPXe electron lifetime by using measurements in a cylindrical ionization chamber and developed the respective analytical charge transport model. Our results showed that it is possible to determine electron lifetime in the cylindrical configuration. The parallel plate electrode configuration was studied for comparison. The measurements were conducted in a two-electrode configuration for a range of pressure values (5–50 bar) for the Xe+0.25%H2 gas mixture and pure Xe.
Charge Diffusion and Repulsion in Semiconductor Detectors

Manuel Ballester,Jaromir Kaspar,Francesc Massanés,Alexander Hans Vija,Aggelos K. Katsaggelos

DOI: https://doi.org/10.3390/s24227123

IF: 3.9

2024-11-07

Sensors

Abstract:Semiconductor detectors for high-energy sensing (X/γ-rays) play a critical role in fields such as astronomy, particle physics, spectroscopy, medical imaging, and homeland security. The increasing need for precise detector characterization highlights the importance of developing advanced digital twins, which help optimize the design and performance of imaging systems. Current simulation frameworks primarily focus on modeling electron–hole pair dynamics within the semiconductor bulk after the photon absorption, leading to the current signals at the nearby electrodes. However, most simulations neglect charge diffusion and Coulomb repulsion, which spatially expand the charge cloud during propagation due to the high complexity they add to the physical models. Although these effects are relatively weak, their inclusion is essential for achieving a high-fidelity replication of real detector behavior. There are some existing methods that successfully incorporate these two phenomena with minimal computational cost, including those developed by Gatti in 1987 and by Benoit and Hamel in 2009. The present work evaluates these two approaches and proposes a novel Monte Carlo technique that offers higher accuracy in exchange for increased computational time. Our new method enables more realistic performance predictions while remaining within practical computational limits.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
High-energy electron measurements with thin Si detectors

Gokul Das H,R. Dubey,K. Czerski,M. Kaczmarski,A. Kowalska,N. Targosz-Sleczkaa,M. Valat

2024-02-25

Abstract:A technique for measuring high-energy electrons using Si detectors of various thicknesses that are much smaller than the range of the examined electrons is presented. The advantages of the method are discussed on the basis of electron-positron pair creation recently studied in deuteron-deuteron fusion reactions at very low energies. Careful Geant 4 Monte Carlo simulations enabled the identification of the main spectral contributions of emitted electrons and positrons resulting from the energy loss mechanisms and scattering processes within the target, detector and their holders. Significant changes in the intensity of the detected electrons, depending on the detector thickness and the thicknesses of absorption foils placed in the front of the detector could be observed. The corresponding correction factors have been calculated and can be used for different applications in basic and applied research.

Instrumentation and Detectors
A comprehensive simulation study of a Liquid-Xe detector for contraband detection

I. Israelashvili,M. Cortesi,D. Vartsky,L. Arazi,D. Bar,E.N. Caspi,A. Breskin

DOI: https://doi.org/10.1088/1748-0221/10/03/p03030

2015-03-31

Journal of Instrumentation

Abstract:Recently, a new detector concept, for combined imaging and spectroscopy of fast-neutrons and gamma rays was presented. It encompasses a liquid-xenon (LXe) converter-scintillator coupled to a UV-sensitive gaseous Thick Gas Electron Multiplier (THGEM)-based imaging photomultiplier (GPM). In this work we present and discuss the results of a systematic computer-simulation study aiming at optimizing the type and performance of LXe converters. We have evaluated the detector spectral response, detection efficiency and spatial resolution for gamma-rays and neutrons in the energy range of 2–15 MeV for 50 mm thick converters consisting of plain LXe volume and LXe-filled capillaries, of Teflon, Polyethylene or hydrogen-containing Teflon (Tefzel).Neutron detection efficiencies for plain LXe, Teflon-capillaries and Tefzel-capillaries converters were about 20% over the entire energy range. In polyethylene capillaries converters the neutron detection efficiency was about 10% at 2 MeV and increased up to about 20% at 14 MeV . Detection efficiencies of gammas in Teflon, Tefzel and polyethylene converters were ∼ 35%. The plain-LXe converter provided the highest gamma-ray detection efficiency, of 0∼ 4–50% in the 2–15 MeV energy range.Optimization of LXe-filled Tefzel capillary dimensions resulted in spatial resolution of ∼ 1.5 mm (FWHM) for neutrons and up to 3.5 mm (FWHM) for gamma-rays.Simulations of radiographic images of various materials using two discrete energy gamma-rays (4.4 MeV and 15.1 MeV) and neutrons in a broad energy range (2–10 MeV) were performed in order to evaluate the potential of elemental discrimination.

instruments & instrumentation
A Method for Proton Detector Efficiency Measurement with Applications in Neutron Beta Decay and Lifetime Experiments

Grant V. Riley,Nadia Fomin,Jaideep Taggart Singh,William Greene,Rebecca Godri,Evan Adamek,Eli Carter

2024-10-04

Abstract:This article proposes a new method to measure the proton detector efficiency for use in "beam" determinations of the free neutron lifetime. There is currently a 4{\sigma} disagreement between the "beam" and "storage" methods of measuring the lifetime of the neutron. A possible reason for this is a systematic uncertainty that is not properly accounted for in one or both types of experiments. Absolute proton counting is an essential facet of the "beam" experimental approach. The absolute detector efficiency is not currently known for existing experiments and could be a source of a hidden systematic error. The proposed absolute calibration techniques can also be extended to new, large area particle detectors designed for future experiments. We propose to laser ionize a beam of atomic hydrogen and simultaneously count both the outgoing protons and electrons. Due to recent advances in UV laser and atomic hydrogen beam technologies, we estimate a count rate as high as ~200k proton-electrons pairs per second under the most favorable scheme discussed. Our proposed technique would remove one of the leading systematic uncertainties in the determination of the neutron lifetime, making an precision of {\pm}0.16 s feasible. Precise and accurate knowledge of the proton detection efficiency is crucial to fully understanding the systematics of the "beam" measurement method as well as developing next generation experiments that will have the precision to test the Standard Model.

Instrumentation and Detectors,Nuclear Experiment
Determination of Sensitivity of Semiconductor Detectors of Gamma-Radiation

Alexandr A. Zakharchenko

DOI: https://doi.org/10.48550/arXiv.1207.5247

2012-07-23

Abstract:Properties of response functions of room temperature gamma-radiation detectors based on wide band-gap semiconductors are researched using Monte-Carlo method. It is shown that approximate formulas which connect detector sensitivity with absorbed energy of monochromatic radiation in the energy range between 0.06 and 3 MeV can be obtained for some kinds of semiconductors. We determined gamma-quantum energy regions and detector thicknesses where obtained approximate formulas are correct. Regions of maximum error of approximate formulas are also determined.

Instrumentation and Detectors
Direct measurement of electron drift parameters in pixelated cadmium zinc telluride semiconductor detectors

Jian Yang,Yu-Lan Li,Guo-Qiang Zeng,Cheng-Shuai Tian,Hao-Wen Deng,Xin-Yue Li

DOI: https://doi.org/10.1016/j.measurement.2023.113128

IF: 5.6

2023-06-01

Measurement

Abstract:The single-polarity charge-sensing electrode is widely used in wide-bandgap room-temperature CdZnTe detectors; in such systems, the drift of electrons is the primary contribution to the induced signal at the anode. Thus, it is important to accurately evaluate the parameters that describe the electron transport properties because they affect the performance of detectors. This paper proposes a method to directly measure the electron mobility and their mean free drift time in a pixelated CdZnTe detector using a depth-sensitive technique. The presented method considers the effect of the nonideal weighting potential in an actual detector, which has not been accounted for in previously proposed methods. In addition, by fitting the cathode waveform to avoid the effect of the time–amplitude walk due to the trigger threshold, improved measurement accuracy of the electron drift parameters can be achieved.

engineering, multidisciplinary,instruments & instrumentation
Direct determination of neutron lifetime in $β$-decay

Valerius V. Vasiliev

2020-01-22

Abstract:The neutron lifetime is determined for now most accurately by two methods --the so-called "beam method" and the method of neutron storage in a trap. The goal of this research is to obtain the neutron lifetime with a higher precision by eliminating the traditional systematic errors. A new feature is extracting the neutron lifetime only from the set of electron counting rates with their errors. The newly received neutron lifetime value is $$ \tau_{NT}=883.31\pm0.02(stat.)\pm0.02(sys.) \quad \mbox{s.} $$ The obtained neutron lifetime is the weighted average of two lifetimes, defined for different subsets of neutrons providing the well-known effect of the asymmetry in the neutron $\beta$-decay. Simple calculations predict the values of these lifetimes and show their correspondence to the known asymmetry parameters of neutron decay. The arithmetic mean (central) value for the two newly introduced neutron lifetimes was determined. The resulting weighted value $\tau_{NT}$ is in a good agreement with the lifetimes in the first and second methods in limits of their double errors, but exceeds them significantly in precision. In addition, estimates of the new lifetimes, which are called here as $L$-neutron lifetime and $R$-neutron lifetime, are fulfilled. The estimation results correspond to the known parameters of the neutron decay asymmetry. \keywords{neutron \and decay \and channel \and lifetime \and electron \and trap} \PACS{06.30.-k \and 12.90+b \and 13.30Ce \and 14.20.Dh \and 28.20-V \and 29.40 Cs}

Data Analysis, Statistics and Probability
Product of mobility and lifetime of charge carriers in CdTe determined from low-frequency current fluctuations

J. Toušek,J. Toušková,I. Křivka

DOI: https://doi.org/10.1038/s41598-024-51541-6

IF: 4.6

2024-01-10

Scientific Reports

Abstract:The model, which clarifies the low-frequency fluctuations of the current flowing in CdTe sample, makes it possible to determine the product of the mobility and lifetime of the charges in mentioned semiconductor. This model, with general validity for semiconductors, is based on the interaction of shallow traps with the valence or conduction band. As a result of the action of these centers, current fluctuations appear, the mean amplitude of which increases linearly with the inverse value of the frequency. It was found that the slope of this dependence is proportional to the product of mobility μ and a constant which is common to all shallow traps and which is denoted by the symbol a. The lifetime of charges located on shallow traps varies according to the relationship τ = a / f and for f min it acquires a maximum value of τ max , which agrees with the stationary lifetime. For the p-CdTe crystalline semiconductor the mobility-lifetime product μ p τ p = (6.6 ± 0.3) × 10 –7 cm 2 V –1 was obtained. Similar study of n-type CdTe showed μ n τ n = (7.5 ± 0.3) × 10 –8 cm 2 V –1 .

multidisciplinary sciences
Field dependence of electronic recoil signals in a dual-phase liquid xenon time projection chamber

E. Hogenbirk,M.P. Decowski,K. McEwan,A.P. Colijn

DOI: https://doi.org/10.1088/1748-0221/13/10/p10031

2018-10-26

Journal of Instrumentation

Abstract:We present measurements of light and charge signals in a dual-phase time projection chamber at electric fields varying from 10 V/cm up to 500 V/cm and at zero field using 511 keV gamma rays from a 22Na source. We determine the drift velocity, electron lifetime, diffusion constant, and light and charge yields at 511 keV as a function of the electric field. In addition, we fit the scintillation pulse shape to an effective exponential model, showing a decay time of 43.5 ns at low field that decreases to 25 ns at high fields.

instruments & instrumentation
Deriving mobility-lifetime products in halide perovskite films from spectrally- and time-resolved photoluminescence

Ye Yuan,Genghua Yan,Samah Akel,Uwe Rau,Thomas Kirchartz

2024-11-04

Abstract:Lead-halide perovskites are semiconductor materials with attractive properties for photovoltaic and other optoelectronic applications. However, determining crucial electronic material parameters, such as charge-carrier mobility and lifetime, is plagued by a wide range of reported values and inconsistencies caused by interpreting and reporting data originating from different measurement techniques. In this paper, we propose a method for the simultaneous determination of mobility and lifetime using only one technique: transient photoluminescence spectroscopy. By measuring and simulating the decay of the photoluminescence intensity and the redshift of the photoluminescence peak as a function of time after the laser pulse, we extract the mobility, lifetime, and diffusion length of halide perovskite films. With a voltage-dependent steady-state photoluminescence measurement on a cell, we relate the diffusion length to the external voltage and quantify its value at the maximum power point.

Materials Science,Applied Physics
Measurement of the Gamma-Ray Sensitivity and Signal-to-noise Ratio of a New Scattered-Electron Detector

Liangbin Xia,Xiaoping Ouyang,Qunshu Wang,Kejun Kang,Xinjian Tan

DOI: https://doi.org/10.1063/1.2976670

2008-01-01

Abstract:A new detector suitable for measuring high intensity pulsed gamma-ray sources and based upon scattered-electron method is proposed. The detector has a relatively flat energy response in the range of 0.4-5 MeV and works in current mode. The performances of the detector under several conditions were studied by Monte Carlo simulation using the MCNP code. A comparison between calculations and measurements performed using the 1.25 MeV line of Co-60 is also addressed. The experimental signal produced by the detector was thus studied and decomposed into its main components in order to establish the signal-to-noise ratio (SNR). The latter is compared to SNR calculated for other type of detectors.
Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance

Will Chism

DOI: https://doi.org/10.48550/arXiv.1711.01138

2017-10-30

Instrumentation and Detectors

Abstract:A simple yet precise optical technique for measuring the ambipolar carrier mobility in semiconductors is presented. Using tightly focused Gaussian laser beams in a photo-reflectance system, the modulated reflectance signal is measured as a function of the Z (longitudinal) displacement of the sample from focus. The modulated component of the reflected probe beam is a Gaussian beam with its profile determined by the focal parameters and the complex diffusion length. The reflected probe beam is collected and input to the detector, thereby integrating over the radial profile of the beam. This results in analytic expressions for the Z dependence of the signal in terms of diffusion length and recombination lifetime. Best fit values for the diffusion length and recombination lifetime are obtained via an iterative fitting procedure. The output diffusion lengths and recombination lifetimes and their estimated uncertainties are combined according to the Einstein relation to yield the mobility and its uncertainty.
Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

Shanshan Wang,Menglin Huang,Yu-Ning Wu,Weibin Chu,Jin Zhao,Aron Walsh,Xin-Gao Gong,Su-Huai Wei,Shiyou Chen

DOI: https://doi.org/10.1038/s43588-022-00297-y

2022-02-17

Abstract:The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely used to study excited-state carrier dynamics. However, the calculated carrier lifetimes are often different from experimental results by orders of magnitude. In this work, by revisiting the definition of carrier lifetime and considering different recombination mechanisms, we report a systematic procedure for calculating the effective carrier lifetime in realistic semiconductor crystals that can be compared directly to experimental measurements. The procedure shows that considering all recombination mechanisms and using reasonable densities of carriers and defects are crucial in calculating the effective lifetime. When NAMD simulations consider only Shockey-Read-Hall (SRH) defect-assisted and band-to-band non-radiative recombination while neglect band-to-band radiative recombination, and the densities of non-equilibrium carriers and defects in supercell simulations are much higher than those in realistic semiconductors under solar illumination, the calculated lifetimes are ineffective and thus differ from experiments. Using our procedure, the calculated effective lifetime of the halide perovskite CH3NH3PbI3 agrees with experiments. It is mainly determined by band-to-band radiative and defect-assisted non-radiative recombination, while band-to-band non-radiative recombination is negligible. These results indicate that it is possible to calculate carrier lifetimes accurately based on NAMD simulations, but the directly calculated values should be converted to effective lifetimes for comparison to experiments. The revised procedure can be widely applied in future carrier lifetime simulations.

Materials Science,Applied Physics
Scattering-Matrix Method For Ballistic Electron-Transport - Theory And An Application To Quantum Antidot Arrays

Hongqi Xu

DOI: https://doi.org/10.1103/PhysRevB.50.8469

IF: 3.7

1994-01-01

Physical Review B

Abstract:In this paper we present a scattering-matrix formalism to study electron transport in a mesoscopic system such as a lateral antidot array with a strong modulation potential. We show that the physically important and less localized states are allowed to dominate in the implementation of the formalism and, therefore, the problem of the numerical instability that one often encounters in the application of the transfer-matrix method to lateral electron transport has been solved. As an example of its application, the formalism is used to calculate the electron transmission in one-dimensional (1D) antidot arrays defined in a narrow two-dimensional electron-gas (2DEG) constriction. We show that when the modulation potential of antidots is weak the conductance bands can appear at the edges of the conductance plateaus of the narrow 2DEG constriction. In the case of strong modulation the calculated conductance of the 1D antidot arrays are seen to be characterized by two kinds of strong fluctuations, namely, the slow and rapid fluctuations, in high Fermi-energy range. The slow fluctuations result from wave interferences and the formation of the electron minigaps in the arrays and are insensitive to the temperature up to a few Kelvin, while the rapid fluctuations reflect the formation of the electron minibands and can be easily smoothed out by thermal averaging. Due to strong overlaps between the minibands associated with different 1D paths in the strongly modulated antidot arrays, the effects of the regular miniband formation may only be observed in the low Fermi-energy range, even at very low temperature.
Lifetime Measurement of the 3d9 2D3/2 Metastable Level in Mo15+ at an Electron Beam Ion Trap

Jialin Liu,Yintao Wang,Bingsheng Tu,Liangyu Huang,Ran Si,Jiguang Li,Mingwu Zhang,Yunqing Fu,Yaming Zou,Ke Yao

DOI: https://doi.org/10.1088/1674-1056/acf121

2023-01-01

Abstract:An experimental measurement of the lifetime of 3d9 2D3/2 metastable level in Mo15+is reported in this work.The Mo15+ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.65 T.The decay photons emitted from 3d9 2D3/2 level are subsequently recorded via a cooled photomultiplier tube.Through meticulous scrutiny of potential systematic uncertainties affecting the measurement outcomes,we have determined the lifetime of Mo15+3d92D3/2 metastable level to be 2.83(22)ms.The experimental result provides a clear distinguishment from existing calcula-tions based on various theoretical approaches.
High-accuracy Measurement of Compton Scattering in Germanium for Dark Matter Searches

Hai-Tao Jia,Shin-Ted Lin,Shu-Kui Liu,Hsin-Chang Chi,Muhammed Deniz,Chang-Hao Fang,Peng Gu,Xi Jiang,Yi-Ke Shu,Qian-Yun Li,Yu Liu,Ren-Ming-Jie Li,Chen-Kai Qiao,Chang-Jian Tang,Henry Tsz-King Wong,Hao-Yang Xing,Li-Tao Yang,Qian Yue,Yu-Lu Yan,Kang-Kang Zhao,Jing-Jun Zhu

DOI: https://doi.org/10.1007/s41365-022-01148-1

2022-01-01

Abstract:Compton scattering with bound electrons contributes to a significant atomic effect in low-momentum transfer, yielding background structures in direct light dark matter searches as well as low-energy rare event experiments. We report the measurement of Compton scattering in low-momentum transfer by implementing a 10-g germanium detector bombarded by a ^137Cs source with a radioactivity of 8.7 mCi and a scatter photon captured by a cylindrical NaI(Tl) detector. A fully relativistic impulse approximation combined with multi-configuration Dirac–Fock wavefunctions was evaluated, and the scattering function of Geant4 software was replaced by our calculation results. Our measurements show that the Livermore model with the modified scattering function in Geant4 is in good agreement with the experimental data. It is also revealed that atomic many-body effects significantly influence Compton scattering for low-momentum transfer (sub-keV energy transfer).

Electron Lifetime Determination in Semiconductor Gamma Detector Arrayes

The Modified Hecht Equation for Pixel Detectors: A Methodological Approach to Evaluating Mobility-Lifetime Products

The Measurement Of Optoelectrons Lifetime In Imaging Process Of Silver Halide Material

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Hand-Held Gamma Detector Based on High-Pressure Xenon Gas: Determination of Charge Carrier Lifetime in Xe

Charge Diffusion and Repulsion in Semiconductor Detectors

High-energy electron measurements with thin Si detectors

A comprehensive simulation study of a Liquid-Xe detector for contraband detection

A Method for Proton Detector Efficiency Measurement with Applications in Neutron Beta Decay and Lifetime Experiments

Determination of Sensitivity of Semiconductor Detectors of Gamma-Radiation

Direct measurement of electron drift parameters in pixelated cadmium zinc telluride semiconductor detectors

Direct determination of neutron lifetime in $β$-decay

Product of mobility and lifetime of charge carriers in CdTe determined from low-frequency current fluctuations

Field dependence of electronic recoil signals in a dual-phase liquid xenon time projection chamber

Deriving mobility-lifetime products in halide perovskite films from spectrally- and time-resolved photoluminescence

Measurement of the Gamma-Ray Sensitivity and Signal-to-noise Ratio of a New Scattered-Electron Detector

Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance

Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations

Scattering-Matrix Method For Ballistic Electron-Transport - Theory And An Application To Quantum Antidot Arrays

Lifetime Measurement of the 3d9 2D3/2 Metastable Level in Mo15+ at an Electron Beam Ion Trap

High-accuracy Measurement of Compton Scattering in Germanium for Dark Matter Searches