Abstract:The detector is a critical component of the single photon emission computed tomography (SPECT) imaging system for giving accurate information from the exact pattern of radionuclide distribution in the target organ. The SIMIND Monte Carlo program was utilized for the simulation of a Siemen's dual head variable angle SPECT imaging system with a low energy high resolution (LEHR) collimator. The Planar and SPECT scans for a (99m)Tc point source and a Jaszczak Phantom with the both experiment and simulated systems were prepared and after verification and validation of the simulated system, the similar scans of the phantoms were compared (from the point of view of the images' quality), namely, the simulated system with the detectors including bismuth germanate (BGO), yttrium aluminum garnet (YAG:Ce), Cerium-doped yttrium aluminum garnet (YAG:Ce), yttrium aluminum perovslite (YAP:Ce), lutetium aluminum garnet (LuAG:Ce), cerium activated lanthanum bromide (LaBr3), cadmium zinc telluride (CZT), and sodium iodide activated with thallium [NaI(Tl)]. The parameters of full width at half maximum (FWHM), energy and special resolution, sensitivity, and also the comparison of images' quality by the structural similarity (SSIM) algorithm with the Zhou Wang and Rouse/Hemami methods were analyzed. FWHMs for the crystals were calculated at 13.895, 14.321, 14.310, 14.322, 14.184, and 14.312 keV and the related energy resolutions obtained 9.854, 10.229, 10.221, 10.230, 10.131, and 10.223 %, respectively. Finally, SSIM indexes for comparison of the phantom images were calculated at 0.22172, 0.16326, 0.18135, 0.17301, 0.18412, and 0.20433 as compared to NaI(Tl). The results showed that BGO and LuAG: Ce crystals have high sensitivity and resolution, and better image quality as compared to other scintillation crystals.

Determination of Sensitivity of Semiconductor Detectors of Gamma-Radiation

Monte Carlo simulation of semiconductor-based detector in mixed radiation field in the atmosphere

Monte Carlo Simulations of the Energy Response of Γ-Ray Dosimeters with CdZnTe Semiconductor Detectors

Measurement of the Gamma-Ray Sensitivity and Signal-to-noise Ratio of a New Scattered-Electron Detector

Semiconductor materials and radiation detection

Comparison of Geant4 with EGSnrc for Simulation of Gamma-Radiation Detectors Based on Semi-Insulating Materials

A semi-empirical response function for Gamma-ray of Scintillation detector based on physical interaction mechanism

Investigation of gamma-ray sensitivity of neutron detectors based on thin converter films

Detection Efficiency Calculations Using Geant4 for a Broad-Energy Germanium Gamma Spectrometer

A Study on Determination of an Optimized Detector for Single Photon Emission Computed Tomography

Monte Carlo Simulation of Ultra-high Resolution γ Detector

Band Gap Variation of CdInSe and CdZnS Fabricated by High Throughput Combinatorial Growth Technique

Charge Diffusion and Repulsion in Semiconductor Detectors

Numeric Simulation of System Sensitivity of Γ-Ray Density Meter

CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors

Precise Monte Carlo simulation of gamma-ray response functions for an NaI(Tl) detector

Comparison of Radiation Detection Performance of Silicon Carbide and Silicon Detector

Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles

Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam

An Investigation of the Possible Interaction Mechanisms for Si(Li) and Ge Detector Response Functions by Monte Carlo Simulation

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4