Resonance Raman scattering and ab initio calculation of electron energy loss spectra of MoS2 nanosheets

Anirban Chakraborti,Arun Singh Patel,Pawan K. Kanaujia,Palash Nath,G.Vijaya Prakash,Dirtha Sanyal

DOI: https://doi.org/10.1016/j.physleta.2016.10.027

2016-04-08

Abstract:The presence of electron energy loss (EELS) peak is proposed theoretically in molybdenum disulfide (MoS2) nanosheets. Using density functional theory simulations and calculations, one EELS peak is identified in the visible energy range, for MoS2 nanosheets with molybdenum vacancy. Experimentally, four different laser sources are used for the Raman scattering study of MoS2 nanosheets, which show two distinct Raman peaks, one at 385 cm-1 (E12g) and the other at 408 cm-1 (A1g). In the cases of three laser sources with wavelengths 405 nm (3.06 eV), 632 nm (1.96 eV) and 785 nm (1.58 eV), respectively, the intensity of E12g Raman peak is more than the A1g Raman peak, while in the case of excitation source of 532 nm (2.33 eV), the intensity profile is reversed and A1g peak is the most intense. Thus a resonance Raman scattering phenomenon is observed for 532 nm laser source.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the electron energy - loss spectroscopy (EELS) and resonant Raman scattering phenomena of molybdenum disulfide (MoS₂) nanosheets, especially the influence of different types of defects (such as molybdenum vacancies and sulfur vacancies) on these spectral characteristics. Specifically, the author hopes to explore the following aspects through theoretical calculations and experimental verification:

1. **New Peaks in Electron Energy - loss Spectroscopy (EELS)**:
- Theoretically, through density - functional - theory (DFT) simulations, identify the electron energy - loss peaks that appear in the visible - light range (about 2.48 eV).
- Explore whether this new peak is related to a specific type of defect (such as molybdenum vacancies).

2. **Resonant Raman Scattering Phenomena**:
- Conduct Raman scattering experiments using laser sources with different wavelengths (405 nm, 532 nm, 632 nm, and 785 nm), and observe a significant enhancement in the intensity of the A₁g Raman peak under the 532 - nm excitation source.
- Explain whether this enhancement is caused by resonant Raman scattering and explore its physical mechanism.

3. **Correlation between Theoretical and Experimental Results**:
- Combine the theoretically calculated EELS results with the experimentally measured Raman spectra to verify and explain the relationship between them.
- Pay special attention to the specific influence of molybdenum vacancies on EELS and Raman spectra.

Through these studies, the author hopes to reveal the changes in the electronic structure of MoS₂ nanosheets caused by defects and their optical response characteristics, providing theoretical and experimental bases for the future development of MoS₂ - based nanophotonic devices.

### Formula Representation

- **Electron Energy - loss Function**: \[ L(\omega)=\text{Im}\left(-\frac{1}{\epsilon(\omega)}\right) \]
where \(\epsilon(\omega)\) is the frequency - dependent dielectric function.

- **Raman Peak Positions**:
- The \( E_{1}^{2g} \) peak is located at 385 cm⁻¹.
- The \( A_{1g} \) peak is located at 408 cm⁻¹.

These formulas and data points are helpful for understanding the electronic and optical properties of MoS₂ nanosheets.