Abstract:Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS2. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons' effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al2O3 and an on–off ratio of 7.75 × 104 using HfO2. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.

Phonon Scattering in Monolayer Molybdenum Disulfide under Different Defect Concentrations Based on Temperature-Dependent Raman Spectra

First-principles Study of the Phonon Vibrational Spectra and Thermal Properties of Hexagonal MoS2

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Phonon scattering processes in molybdenum disulfide

Effects of hot phonons and thermal stress in micro-Raman spectra of molybdenum disulphide

Enhancing heat transport in MoS2 via defect-engineering

Coherent Longitudinal Acoustic Phonon Approaching THz Frequency in Multilayer Molybdenum Disulphide.

Phonon-Defect Scattering in Doped Silicon by Molecular Dynamics Simulation

Beyond Perturbation: Role of Vacancy-Induced Localized Phonon States in Thermal Transport of Monolayer MoS2

Phonon Scattering Mechanism in Van Der Waals Heterostructures Comprising of MoS2 and WS2 Nanosheets

Four-phonon Scattering and Thermal Transport in 2H–mote2

Unveiling Defect-Related Raman Modes of Topological Phononic Β−mob2 Single Crystal Via Angle-Resolved Polarized Raman Spectra

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Temperature- and Phase-Dependent Phonon Renormalization in 1T'-MoS2

Phonon Dephasing Dynamics in MoS2

Temperature dependent excitonic effects in the optical properties of single-layer MoS$_2$

High temperature anomalous Raman and photoluminescence response of molybdenum disulfide with sulfur vacancies

Phonon dispersion of MoS$_2$

Anharmonic Phonon Scattering Study of 2h–mote2 Crystal by Raman Spectroscopy

Influence of Atomic-Scale Defect on Thermal Conductivity of Single-Layer MoS2 Sheet

The Role of Interfacial Electronic Properties on Phonon Transport in Two-Dimensional MoS2 on Metal Substrates.