Abstract:Enhancing photoluminescence (PL) in single-layer transition metal dichalcogenides has garnered significant interest, particularly for advancing high-performance 2D electronics and optoelectronics. The combination of surface engineering and contemporary growth methods has provided a platform for investigating optical signals. In this study, we present variations in PL and Raman signals of single-layer MoS2 flakes grown conformally using the glass-assisted CVD method on square-patterned surfaces with varying well depths. PL spectroscopy revealed a systematic and pronounced enhancement in intensities as the valley thickness decreased from 285 nm to 225 nm. Conversely, for the hill regions of the samples, the PL intensity initially increased with decreasing valley thickness and then decreased, despite the hill regions having a constant thickness of 300 nm. On the other hand, PL maps did not exhibit a systematic dependence of intensities on the hill-valley thickness distinction, contrary to expected results based on literature data for similar materials on flat surfaces. The origin of the intensity oscillations was attributed to possible mechanisms, including thickness-dependent interference and strain-related exciton funneling effects. Additionally, Raman measurements revealed irregular variations in intensity in hill regions, dependent on the thicknesses of the underlying SiO2 layers. Furthermore, we observed that the sizes of the flakes increased as the well depths of the underlying patterned surface decreased. This phenomenon might be attributed to alterations in the carrier gas flow pattern and varying temperature gradients between the hills and valleys. These results hold substantial potential to open new avenues for the integration of 2D transition metal dichalcogenides into on-chip electronic and optoelectronic devices.

Excitation-dependent photoluminescence intensity of monolayer MoS2: Role of heat-dissipating area and phonon-assisted exciton scattering

Tunable Photoluminescence from Monolayer Molybdenum Disulfide

Enhanced Raman and photoluminescence response in monolayer MoS$_2$ due to laser healing of defects

Interfacial Effects on the Photoluminescence Properties of Epitaxial Monolayer MoS2 on MoO2 on C‐sapphire

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit

Pressure confinement effect in MoS2 monolayers.

Analysis of Photoluminescence Behavior of High-Quality Single-Layer MoS2

Localized Gradual Photomediated Brightness and Lifetime Increase of Superacid-Treated Monolayer MoS2

Localized Gradual Photomediated Brightness and Lifetime Increase of Superacid Treated Monolayer MoS$_2$

Changes in the Photoluminescence of Monolayer and Bilayer Molybdenum Disulfide during Laser Irradiation

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence.

Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS2 on Fused Silica

Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

Enhanced light-matter interaction in atomically thin MoS 2 coupled with 1D photonic crystal nanocavity.

Strong suppression of emission quenching in core quantum dots coupled to monolayer MoS2

Electrostatic Control of Photoluminescence from A and B Excitons in Monolayer Molybdenum Disulfide

In Situ Doping Effect in Monolayer MoS2 Via Laser Irradiation

Elucidating the role of electron transfer in the photoluminescence of $\mathrm{MoS_{2}}$ quantum dots synthesized by fs-pulse ablation

Probing angle-resolved reflection signatures of intralayer and interlayer excitons in monolayer and bilayer MoS2

Optical Signal Investigation of Monolayer MoS2 Grown Via Glass-Assisted CVD On Patterned Surfaces

Layer-Number-Dependent Exciton Recombination Behaviors of MoS2 Determined by Fluorescence-Lifetime Imaging Microscopy