Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Prediction of Novel Stable 2D-Silicon with Fivefold Coordination

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

A New Metastable Metallic Silicon Allotrope

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Semimetallic single atomic layer silicon allotrope with Dirac fermions

First-principles prediction of a new Dirac-fermion material: silicon germanide monolayer

Rise of Silicene: A Competitive 2d Material

Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice

Silicene and transition metal based materials: prediction of a two-dimensional piezomagnet

Theoretical prediction of a novel hexagonal narrow-gap silicon allotrope under high pressures

Tight-binding model and ab initio calculation of silicene with strong spin-orbit coupling in low-energy limit

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

g-SiC6 Monolayer: A New Graphene-like Dirac Cone Material with a High Fermi Velocity

Modulation of Electronic Properties with External Fields in Silicene-Based Nanostructures

Metallic subnanometer porous silicon: A theoretical prediction

Silicite: The layered allotrope of silicon

Novel bonding patterns and optoelectronic properties of the two-dimensional Si$_x$C$_y$ monolayers

Semimetallic Two-Dimensional Boron Allotrope with Massless Dirac Fermions

Physics of Silicene Stripes

SiC siligraphene: a novel SiC allotrope with wide tunable direct band gap and strong anisotropy

Electron Delocalization in Gate-Tunable Gapless Silicene