Abstract:A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is fabricated with a 180 nm CMOS Image Sensor (CIS) process to study the particle detection performance of enlarged pixels. In this work, the radiation-induced effects on the charge collection of the sensor under the fluence of 1 $\times$ 10^13 1 MeV neq/cm^2 are studied by the measurements with the radioactive source of Fe-55 and the Technology Computer Aided Design (TCAD) simulations, since the radiation hardness of 6.8 $\times$ 10^12 1 MeV neq/cm^2 per year for Non-Ionizing Energy Loss (NIEL) effects is required. In measurements, the sensor gain has been calibrated using the k-$\alpha$ peak of Fe-55 before and after irradiation. The pixel-wise equivalent noise charge (ENC), charge collection efficiency (CCE) and signal-to-noise ratio (SNR) were evaluated. The radiation-induced effects on cluster properties are studied through a self-developed reconstruction algorithm. In TCAD simulations, charge collections in 5 $\times$ 5 pixel matrixes for two typical impinging cases of incident particles were simulated with and without irradiation. Both measurements and simulations indicate that enlarged pixels with area of 21 $\mu$m $\times$ 84 $\mu$m, though suffering greater loss on sensor performance than small pixels do, still have satisfactory noise and charge collection performance after irradiation for particle tracking in the upcoming collider detectors.

A study on the shielding mechanisms of SOI pixel detector

Characterization of SOI pixel sensor using pinned depleted diode structure with AC-coupling on the diode

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

Lapis SOI Pixel Process

Suppressing crosstalk in the photoelectron <i>in</i>-<i>situ</i> sensing device (PISD) by double SOI

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Compensation of radiation damages for SOI pixel detector via tunneling

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Performance study of double SOI image sensors

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

3D-integrated pixel circuit for a low power and small pitch SOI sensor

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

Characterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector

Compensation for TID Damage in SOI Pixel Devices

Novel Photodetectors and Image Sensors Based on Silicon-on-insulator Substrate.

Design and 3D TCAD simulation of a novel floating-electrode silicon pixel detector

Total-Ionization-Dose Radiation-Induced Noise Modeling and Analysis of a 2k $\times$ 2k 4T CMOS Active Pixel Sensor for Space Applications