Abstract:Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon pixels. Some of this research was done in the framework of high luminosity particle physics experiments, along with radiation hardness studies of basic semiconductors devices. In its simplest form the semiconductor pixel detectors reduce to a PIN or PN structure partially or totally depleted, or in some MOS and APD (Avalanche PhotoDiode) structures. Bulk or surface defects affect considerably transport of free carriers. We propose guidelines for pixel design, which will be tested through a few pixel structures. This design method includes into the design the properties of defects. The electrical properties reduce to parameters, which can be introduced in a standard simulation code to make predictive simulations. We include an analytical model for defect annealing derived from isochronal annealing experiments. The proposed method can be used to study pixels detectors with different geometrical structures and made with different semiconducting materials. Its purpose is to provide an alternative to tedious and extensive radiation tests on final fabricated detectors. This is necessary for the long-term reliability of detectors together with their radiation tolerance. A general method for pixel design is introduced and we will show how it can be used for the design of alternate to silicon (germanium) pixels.

Compensation of radiation damages for SOI pixel detector via tunneling

Compensation for TID Damage in SOI Pixel Devices

Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO2 for advanced silicon radiation detectors

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

A study on the shielding mechanisms of SOI pixel detector

Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure

Lapis SOI Pixel Process

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

TCAD simulations of silicon strip and pixel sensor optimization

Anomalous TID Susceptibility on Collector Bias for SOI High-Voltage Polysilicon Emitter Bipolar Transistors

Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon