Abstract:A CMOS compatible P+/N-well/P-sub double junction photodiode pixel was proposed, which can efficiently detect fluorescence from CsI(Tl) scintillation in an X-ray sensor. Photoelectric and spectral responses of P+/N-well, N-well/P-sub and P+/N-well/P-sub photodiodes were analyzed and modeled. Simulation results show P+/N-well/P-sub photodiode has larger photocurrent than PC/Nwell photodiode and N-well/P-sub photodiode, and its spectral response is more in accordance with CsI(Tl) fluorescence spectrum. Improved P+/N-well/P-sub photodiode detecting CsI(Tl) fluorescence was designed in CSMC 0.5 mu m CMOS process, CTIA (capacitive transimpedance amplifier) architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 x 8 pixel array and pixel pitch is 100 x 100 mu m(2). Testing results show the dark current of the improved P+/N-well/P-sub photodiode (6.5 pA) is less than that of PC/Nwell and P+/N-well/P-sub photodiodes (13 pA and 11 pA respectively). The sensitivity of P+/N-well/P-sub photodiode is about 20 pA/lux under white LED. The spectrum response of P+/N-well/P-sub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of CsI(Tl) in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V.m(2)/W or 5097e(-)/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.

Performance study of double SOI image sensors

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy

Double Junction Photodiode for X-Ray Cmos Sensor Ic

Novel Photodetectors and Image Sensors Based on Silicon-on-insulator Substrate.

Novel Photodetectors and Image Sensors Based on SOI Substrate

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure

Development of high-speed X-ray imaging system for SOI pixel detector

Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon

Lapis SOI Pixel Process

Assessment of 180 Nm Double SOI Technology for Analog Front-End Design with Back-Gate Voltage

Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks

Novel Photodetectors Based on SOI and Two-dimensional Materials

Suppressing crosstalk in the photoelectron <i>in</i>-<i>situ</i> sensing device (PISD) by double SOI

Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

A study on the shielding mechanisms of SOI pixel detector

Improvement of Spectroscopic Performance using a Charge-sensitive Amplifier Circuit for an X-Ray Astronomical SOI Pixel Detector

Cmos-Compatible Integrated Spectrometer Based on Echelle Diffraction Grating and Msm Photodetector Array