Abstract:Abstract We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO 2 -masks on Si (111) with various mask opening sizes (20–150 nm) and pitches (0.25–2 μ m), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content ( x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core–shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core–shell structure.

Focused ion beam induced growth of monocrystalline InAs nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Graphitic Platform for Self-Catalysed InAs Nanowires Growth by Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

GaAsSb/InAs Core-Shell Nanowires Grown by Molecular-Beam Epitaxy

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

A Comparative Study of Graphite and Silicon As Suitable Substrates for the Self-Catalysed Growth of InAs Nanowires by MBE

Self-catalyzed Growth of InAs Nanowires on InP Substrate

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Catalyst-free Growth of Lateral InAs Nanowires