Abstract:We investigate monocrystalline InAs nanowires (NWs) which are grown by molecular beam epitaxy (MBE) and induced by focused ion beam (FIB) implanted Au spots. With this unique combination of methods an increase of the aspect ratio, i.e. the length to width ratio, of the grown NWs up to 300 was achieved. To control the morphology and crystalline structure of the NWs, the growth parameters like temperature, flux ratios and implantation fluence are varied and optimized. Furthermore, the influence of the used molecular arsenic species, in particular the As$_2$ to As$_4$ ratio, is investigated and adjusted. In addition to the high aspect ratio, this optimization results in the growth of monocrystalline InAs NWs with a negligible number of stacking faults. Single NWsx were placed site-controlled by FIB implantation, which supplements the working field of area growth.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to grow single - crystal InAs nanowires (NWs) by focused - ion - beam (FIB) - induced growth, in order to overcome the problem of difficult control of crystal structure and morphology in traditional methods. Specifically, the author hopes to achieve the controllable growth of single - crystal InAs nanowires with a high aspect ratio and without stacking faults by optimizing growth parameters (such as temperature, arsenic species ratio, ion implantation dose, etc.). ### Main problems and solutions 1. **Crystal structure control**: - When growing InAs nanowires by traditional molecular - beam epitaxy (MBE), the crystal structure frequently changes between zincblende and wurtzite, resulting in increased scattering in electrical transport and a decline in optical quality. - By optimizing the growth conditions, especially by adjusting the ratio of arsenic species (As₂/As₄), the paper successfully grows single - crystal InAs nanowires with almost no stacking faults. 2. **Morphology control**: - The aspect ratio of nanowires is crucial for applications. By adjusting the growth temperature, arsenic pressure and other parameters, the author achieves an aspect ratio as high as 300:1. - Using FIB - implanted gold catalyst dots can precisely control the growth position and density of nanowires, thus achieving site - controlled growth. 3. **Growth mechanism optimization**: - The paper explores the influence of different growth parameters on the VLS (vapor - liquid - solid) or VSS (vapor - solid - solid) growth mechanisms to ensure the uniformity and consistency of nanowires. - Through experiments, the optimal growth temperature is determined to be 370°C, at which the length and density of nanowires both reach their maximum values. ### Conclusion By focused - ion - beam - induced gold - catalyst implantation and optimized MBE growth conditions, the author successfully achieves the growth of InAs nanowires with a high aspect ratio, single - crystal and without stacking faults. This method not only simplifies the preparation steps but also improves the performance and application potential of nanowires.

Focused ion beam induced growth of monocrystalline InAs nanowires

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