Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors. Application to capture cross sections

Georgios D. Barmparis,Yevgeniy S. Puzyrev,X.-G. Zhang,Sokrates T. Pantelides

DOI: https://doi.org/10.1103/PhysRevB.92.214111

2015-08-22

Abstract:Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major issue in the performance of solar cells and light-emitting diodes. A theory of nonradiative inelastic scattering by defects, however, is non-existent, while the the- ory for carrier capture by defects has had a long and arduous history. Here we report the construction of a comprehensive theory of inelastic scattering by defects, with carrier capture being a special case. We distinguish between capture under thermal equilibrium conditions and capture under non-equilibrium conditions, e.g., in the presence of electrical current or hot carriers where carriers undergo scattering by defects and are described by a mean free path. In the thermal-equilibrium case, capture is mediated by a non-adiabatic perturbation Hamiltonian, originally identified by Huang and Rhys and by Kubo, which is equal to linear electron-phonon coupling to first order. In the non-equilibrium case, we demonstrate that the primary capture mechanism is within the Born-Oppenheimer approximation, with coupling to the defect potential inducing Franck-Condon electronic transitions, followed by multiphonon dissipation of the transition energy, while the non-adiabatic terms are of secondary importance. We report density-functional-theory calculations of the capture cross section for a prototype defect using the Projector-Augmented-Wave which allows us to employ all-electron wavefunctions. We adopt a Monte Carlo scheme to sample multiphonon configurations and obtain converged results. The theory and the results represent a foundation upon which to build engineering-level models for hot-electron degradation of power devices and the performance of solar cells and light-emitting diodes.

Materials Science

What problem does this paper attempt to address?

This paper attempts to solve the problems of inelastic multi - phonon scattering and carrier trapping caused by defects in semiconductors. Specifically, it aims to establish a comprehensive theoretical framework to describe these processes, with particular attention to the carrier trapping mechanisms under different conditions (such as thermal equilibrium and non - equilibrium conditions).

### Main problems and background of the paper

1. **Importance of the problem**:
- **Hot - electron effect**: Inelastic scattering and carrier trapping are the main reasons for the degradation of power devices, which hinders their commercial development.
- **Performance of photovoltaic and light - emitting diodes**: Carrier trapping significantly affects the performance of solar cells and light - emitting diodes.

2. **Deficiencies of existing theories**:
- **Lack of non - radiative multi - phonon scattering theory**: Currently, there is no theory to describe inelastic multi - phonon scattering caused by defects.
- **Historical controversies in carrier trapping theory**: Despite a long history of research, the carrier trapping theory is still controversial and imperfect.

### Research objectives

The goal of the paper is to construct a comprehensive theoretical framework to describe inelastic scattering caused by defects and its impact on carrier trapping. Specifically, it includes:

- **Distinguishing trapping mechanisms under different conditions**: Studying the carrier trapping mechanisms under thermal equilibrium and non - equilibrium conditions (for example, in the presence of current or hot carriers).
- **Theoretical basis**: Under thermal equilibrium conditions, trapping is caused by the non - adiabatic perturbation Hamiltonian (Huang - Rhys - Kubo, HRK); under non - equilibrium conditions, the main trapping mechanism is the adiabatic transition within the Born - Oppenheimer approximation (BOA), accompanied by multi - phonon dissipation.
- **Calculation method**: Using the first - principles density functional theory (DFT) and the projected - augmented - wave (PAW) scheme for calculation, combined with the Monte Carlo method to sample multi - phonon configurations to obtain convergent results.

### Key formulas

1. **Trapping rate under thermal equilibrium conditions** (using Fermi's golden rule):
\[
w_{\text{BO}}^{if} = \frac{2\pi}{\hbar} \sum_f \left| \langle X_f | \langle \Psi_f | H_{\text{BO}}^1 | \Psi_i \rangle | X_i \rangle \right|^2 \delta(\Theta_f - \Theta_i + \epsilon_{if})
\]
where $\Theta_i, \Theta_f$ are the total phonon energies of the initial and final states, and $\epsilon_{if}=\epsilon_f - \epsilon_i$ is the energy difference between the electronic states.

2. **Trapping rate under non - equilibrium conditions**:
\[
\sigma = \frac{L}{L_{\text{capture}}} \left( \sigma_{\text{adiabatic}} + \sigma_{\text{nonadiabatic}} \right)
\]
where $L$ is the mean free path of elastic scattering, and $L_{\text{capture}}$ is the average propagation distance of electrons before being trapped.

3. **Multi - phonon matrix element**:
\[
M_{\text{BO}}^e(\{R_j\}) = \left| \langle \Psi_f(\{R_j\}) | H_{\text{BO}}^1(\{R_j\}) | \Psi_i(\{R_j\}) \rangle \right|^2
\]

4. **Non - adiabatic term**:
\[
- \sum_k \frac{\hbar^2}{2m_k} \left[ \langle X_f | \nabla_R^2 ( \langle \Psi_f(\{R_j\}) | \delta \Psi_i \rangle | X_i \rangle ) - \langle X_f |