Abstract:The understanding of the mixed ionic-electronic nature of charge transport in Metal Halide Perovskites (MHPs) and the role of morphological and interface defects is crucial for improving the performance of MHP based photovoltaic devices. We present results of a parallel study on MAPbX$_3$ (X = I, Br and Cl), synthesized as solution processed polycrystalline powders, and as single crystals grown by a facile low temperature assisted technique. We have studied ionic-electronic charge transport in single-crystal and polycrystalline (pressed pellet and thick film) samples in order to compare the effect of defects and trap states associated with halide ion migration, device morphology and interfaces at grain boundaries as well as at electrodes. The mobility of halide ions and associated Coulomb capture of electrons or holes was determined by dielectric and space charge limited current (SCLC) dark I-V measurements, and also simulated using an ionic-electronic model. The defect capture cross section of electronic charge was found to be proportional to the simulated halide ion density Nion, which varied in the range $10^{16}$ cm$^{-3}$ - $10^{22}$ cm$^{-3}$ depending on the halide ion. The trap state density from I-V measurements, Ntrap ~ $10^9$ - $10^{10}$ cm$^{-3}$, was found to be lower than previous reports. Single crystal MAPbI3 devices exhibited a low capture cross section ($\sigma$ ~ $10^{-16}$ cm$^{-2}$), high mobility ($\mu$ ~ 196 cm$^2$/V-s) and large diffusion length (LD ~ 6 $\mu$m). The study shows that non-radiative energy loss and carrier trapping are suppressed and transport properties enhanced by reducing grain boundary effects, along with interface engineering to prevent halide ion accumulation at the electrodes.

Mobile defects as mediated states for charge-carrier trapping in metal halide perovskites quantum dots

Charge Carriers Trapping by the Full-Configuration Defects in Metal Halide Perovskites Quantum Dots

Energy resonance transfer between quantum defects in metal halide perovskites

Quantum Defect-Assisted Multiphonon Raman Scattering in Metal Halide Perovskites

Polaron states of the full-configuration defects in metal halide perovskites

Quantitative Analysis of Trap-State-Mediated Exciton Transport in Perovskite-Shelled PbS Quantum Dot Thin Films Using Photocarrier Diffusion-Wave Nondestructive Evaluation and Imaging

An explanation for high defect tolerance in metal halide perovskite quantum dots

Reducing hot carrier cooling rate in metal halide perovskites through lead vacancies: time-domain ab initio analysis

Charge transport in mixed metal halide perovskite semiconductors

Self-regulation mechanism for charged point defects in hybrid halide perovskites

Toward a General Understanding of Exciton Self-Trapping in Metal Halide Perovskites

Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells

Charge-Carrier Trapping and Radiative Recombination in Metal Halide Perovskite Semiconductors

Synergy Between Ion Migration and Charge Carrier Recombination in Metal-Halide Perovskites

Deciphering the Effect of Traps on Electronic Charge Transport Properties of Methylammonium Lead Tribromide

Defect Trapping States and Charge Carrier Recombination in Organic–inorganic Halide Perovskites

Modulation of Point Defect Properties Near Surfaces in Metal Halide Perovskites

Optical Spectra of the Quantum Defects in Metal Halide Perovskites

Morphology-Dependent Charge Carrier Dynamics and Ion Migration Behavior of CsPbBr3 Halide Perovskite Quantum Dot Films

Effect of trap states, ion migration and interfaces on carrier transport in single crystal, polycrystalline and thick film devices of halide perovskites CH$_3$NH$_3$PbX$_3$ (X= I, Br, Cl)

Work Function Dependent Photogenerated Carrier Dynamics of Defective Transition Metal Dichalcogenide Heterostructures