Self-regulation mechanism for charged point defects in hybrid halide perovskites

Aron Walsh,David O. Scanlon,Shiyou Chen,Xingao Gong,Su-Huai Wei

DOI: https://doi.org/10.1002/anie.201409740

2014-11-27

Abstract:Hybrid halide perovskites such as methylammonium lead iodide (CH3NH3PbI3) exhibit unusually low free carrier concentrations despite being processed at low-temperatures from solution. We demonstrate, through quantum mechanical calculations, that the origin of this phenomenon is a prevalence of ionic over electronic disorder in stoichiometric materials. Schottky defect formation provides a mechanism to self-regulate the concentration of charge carriers through ionic compensation of charged point defects. The equilibrium charged vacancy concentration is predicted to exceed 0.4% at room temperature. This behaviour, which goes against established defect conventions for inorganic semiconductors, has implications for photovoltaic performance.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: Why do mixed - halide perovskite materials (such as formamidinium lead iodide, CH₃NH₃PbI₃) exhibit an abnormally low free - carrier concentration during low - temperature solution processing. Although these materials have a low defect - formation energy, the carrier concentration in their films is very low, approximately 10⁹–10¹⁴ cm⁻³, and the bulk electron - hole recombination is highly suppressed.

Specifically, through quantum - mechanical calculations, the paper reveals that the reason for this phenomenon is that ionic disorder is dominant rather than electronic disorder. The formation of Schottky defects provides a mechanism to automatically regulate the carrier concentration through ionic compensation of charged point defects. The paper predicts that at room temperature, the equilibrium charged - vacancy concentration can exceed 0.4%. This behavior is different from the defect rules of traditional inorganic semiconductors and has an important impact on photovoltaic performance.

### Key problem summary:
1. **Reason for low carrier concentration**: The paper explains why the CH₃NH₃PbI₃ material can still maintain an extremely low free - carrier concentration after low - temperature solution treatment.
2. **Ionic disorder mechanism**: Through the ionic compensation mechanism formed by Schottky defects, it explains how to automatically regulate the carrier concentration.
3. **Uniqueness of defect chemistry**: It explores the unique defect chemistry in mixed - halide perovskite materials, especially the differences from other inorganic perovskite materials.

### Formula presentation:
The equilibrium vacancy concentration formed by Schottky defects can be calculated by the law of mass action:

\[ [V_{\text{MA}}][V_{\text{Pb}}][V_{\text{I}}]^3 = K_C = K^\circ_C \exp\left(-\frac{\Delta H_S}{k_B T}\right) \]

where:
- \( K_C \) represents the lattice - site vacancy fraction due to the reaction enthalpy (\( \Delta H_S \)),
- \( K^\circ_C \) is the standard equilibrium constant,
- \( k_B \) is the Boltzmann constant,
- \( T \) is the temperature.

These formulas and theories explain why the CH₃NH₃PbI₃ material can still have excellent optoelectronic properties while maintaining a high defect concentration.