Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions

V. P. LaBella,Z. Ding,D.W. Bullock,C. Emery,P. M. Thibado
DOI: https://doi.org/10.48550/arXiv.1503.04163
2015-03-14
Abstract:The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly accurate temperature measurement system and uses a solid-source, cracked phosphorus, valved effusion cell. Five InP(001) reconstructions are observed with RHEED by analyzing patterns in three principal directions. Under a fixed P2 flux, decreasing the substrate temperature gives the following reconstructions: c(2x8), (2x4), (2x1), (2x2), and c(4x4). In situ STM images reveal that only two of these reconstructions yields long-range periodicity in real space. InP(001) does not form the metal rich (4x2) reconstruction, which is surprising because the (4x2) reconstruction has been coined the universal surface reconstruction since all III-V(001) surfaces were thought to favor its formation.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to conduct in - depth research on the reconstruction phenomenon of indium phosphide (InP)(001) surfaces under different growth conditions, especially to systematically map out all possible surface reconstructions of InP(001) surfaces prepared by molecular beam epitaxy (MBE) under different phosphorus (P₂) fluxes and substrate temperatures through reflection high - energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Specifically, this research aims to: 1. **Determine the surface reconstructions formed under different conditions**: By changing the P₂ flux and substrate temperature, observe and record the five main reconstruction types formed on the InP(001) surface: c(2×8), (2×4), (2×1), (2×2), and c(4×4). 2. **Understand the formation mechanisms of these reconstructions**: By analyzing RHEED patterns and STM images, explore the conversion mechanisms between different reconstructions and their influence on the surface structure. 3. **Explain why certain reconstructions did not form**: In particular, study why the (4×2) reconstruction, which is generally considered to be common on III - V (001) surfaces, failed to form. 4. **Compare the differences with the GaAs(001) surface**: Compare the reconstruction behavior of the InP(001) surface with the widely studied GaAs(001) surface to reveal the similarities and differences between them. 5. **Provide accurate experimental data**: Use a high - precision non - contact temperature measurement system to ensure the accuracy of experimental conditions and provide experimental basis for future theoretical models. Through these studies, the author hopes to better understand the reconstruction behavior of the InP(001) surface, thereby providing theoretical support for optimizing the growth process of semiconductor materials and improving device performance.