Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity

Control over topological insulator photocurrents with light polarization

Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Ultrafast dynamics of Dirac surface and bulk photocarriers in topological-insulator bismuth telluride nanocrystals using terahertz spectroscopy

Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Switching on surface conduction in a topological insulator

Stable topological insulators achieved using high energy electron beams

Ultrafast surface carrier dynamics in the topological insulator Bi2Te3

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Ultrafast Energy- and Momentum-resolved Surface Dirac Photocurrents in the Topological Insulator Sb$_2$Te$_3$

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Topological Insulator Metamaterial with Giant Circular Photogalvanic Effect

Spin Hall photoconductance in a 3D topological insulator at room temperature

Electrical Control of Spin in Topological Insulators

Reversible engineering of topological insulator surface state conductivity through optical excitation

Ultrafast switching of topological invariants by light-driven strain

Ultrafast Optical Probing of Topological Insulators

Ultrafast electronic heat dissipation through surface-to-bulk Coulomb coupling in quantum materials

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates