Abstract:Topologically protected surface current is highly promising for next-generation low-dissipation and disorder-tolerant quantum electronics and computing. Yet, electric transport from the co-existing bulk state dominates the responses of the Dirac surface state, especially at elevated temperatures relevant to technological applications. Here, we present an approach that convincingly showcases the generation, disentanglement, and precise control of enduring surface charge carriers on a topological insulator, Bi2Se3, with high bulk conductivity, all achieved at room temperature. By using pump–probe modulation spectroscopy under ultrabroadband driving tunable from 4 meV to 1.55 eV, we show the terahertz (THz) field-induced surface carriers by discovering their initial temporal responses dominant over high density trivial bulk carriers. Strikingly, the response of the induced surface carrier responses persists for more than ∼5 ps and is enhanced by reducing pump photon energy. The dynamics and lifetime of the distinct surface response manifest themselves as the enhanced THz pump-induced THz transmission, which directly correlates with the transient negative THz conductivity. Increasing the THz driving field reduces the induced surface carrier lifetime and identifies, particularly, an optimal pump field of Es ∼ 224 kV cm−1 for generating the dominant surface response relative to the bulk. This surface carrier dominant regime is suppressed by a joint effect of enhanced surface-bulk scattering and a more rapid saturation of surface excitation compared to the bulk that sets in above Es. The controllability of room temperature topologically surface carriers through pump photon energy offer compelling possibilities for extending this approach to other topological complex materials.

Switching on surface conduction in a topological insulator

Gate-Controlled Surface Conduction in Na-Doped Bi2te3 Topological Insulator Nanoplates

Reversible engineering of topological insulator surface state conductivity through optical excitation

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Current-induced switching of proximity-induced ferromagnetic surface states in a topological insulator

Room temperature persisting surface charge carriers driven by intense terahertz electric fields in a topological insulator Bi2Se3

Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator

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Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

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Electronically-driven switching of topology in LaSbTe

Topological Control: Systematic Control of Topological Insulator Dirac Fermion Density on the Surface of Bi2Te3

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

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Magnetotransport of Dirac Fermions on the surface of a topological insulator

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