Abstract:Solid-state semiconductor switches are emerging as an attractive choice for the fast switching of compact, repetitive, and pulsed power systems. In particular, the high voltage and fast switching capabilities of SiC MOSFETs are well suited for many applications when appropriately gated. For instance, the turn-on and turn-off characteristics of such devices are strongly dependent on the gate driving circuitry. Traditional commercial gate drivers, typically utilizing push–pull or totem-pole driving topologies, are often not well suited for fast, high current switching with rise times on the order of 10–20 ns, as the driving performance is highly dependent on the combined RLC characteristics of the driving circuitry and the switching device. The proposed gate drive topology utilizes a current-carrying inductor to rapidly charge theMOSFET gate–source capacitance. A high-voltage inductive kick generates the necessary potential to drive the inductor current into the gate through the parasitic gate impedance. As the energy stored in the drive inductor is continuously variable, it can be adjusted such that the gate voltage settles to a lower value, typically 20 V, after the initial kick to prevent excessive gate–source overvoltage. With an inductive drive current of ~23 A, a peak $text{d}I/text{d}t$ of 25 kA $mu text{s}^{-1}$ was achieved for the tested bare SiC MOSFET die. Additionally, a peak $text{d}I/text{d}t$ of 13 kA $mu text{s}^{-1}$ was achieved with the TO-247 packaged device.

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Design and Application of A 1200v Ultra-Fast Integrated Silicon Carbide Mosfet Module

Novel Low-Side/High-Side Gate Drive and Supply With Minimum Footprint, High Power Density, and Low Cost for Silicon and Wide-Bandgap Transistors

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

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An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A 20mhz 4A Gate Driver with 5.5 to 24V Output Drive Voltage for Wide Bandgap FETs.

Low-Loss High-Performance Base-Drive Unit for SiC BJTs

Analysis on Ultra-Fast Switching of SiC MOSFETs for Megahertz Applications Enabled by 3D Package and Embedded Components

Loss Free Gate Driver Unipolar Power Supply for High Side Power Transistors

High-frequency Driving Circuit and Loss Analysis of SIC MOSFET Based on Discrete Components

A Novel High Speed Lateral Igbt with A Self-Driven Second Gate

A gate driver based soft-switching SiC bipolar junction transistor

A Cost-Effective Series-Connected Gate Drive Circuit for SiC MOSFET

A Resonant Drive Circuit for GaN Power MOSHFET

Active Gate Drive Circuit with Auxiliary Drive Branch for SiC MOSFET

Fast SiC Switching Limits for Pulsed Power Applications