Abstract:The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

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Prospects of silicide contacts for silicon quantum electronic devices

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Understanding Solid-State Interactions: Ultrathin Ni1-xPtx Silicide Films Formed on Si(100)

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

Kinetics and Morphology of Ni1-xPtx-silicide Epitaxy on Si(001)

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Topographical, compositional and schottky characterization of PtSi/Si schottky diodes

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure

Self-aligned Formation of Superconducting Sub-5 Nm PtSi Films

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Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces

Understanding the Formation Mechanisms of Silicon Particles from the Thermal Disproportionation of Hydrogen Silsesquioxane

Electrical Properties Of The Tisi2-Si Transition Region In Contacts: The Influence Of An Interposed Layer Of Nb