Abstract:We study the performance of a hybrid Graphene-Boron Nitride {GNR-BN} armchair nanoribbon {a-GNR-BN} MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p+1 and 3p+2 of a-GNR-BN with BN atoms embedded on both sides {2, 4 and 6 BN on each side} on the GNR. The material properties like band gap, effective mass and density of states of these H-passivated structures have been evaluated using the Density Functional Theory {DFT}. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Greens Function {NEGF} formalism to calculate the ballistic MOSFET device characteristics. For a hybrid nanoribbon of width ~ 5 nm, the simulated ON current is found to be in the range 276 uA - 291 uA with an ON/OFF ratio 7.1 x 10^6 - 7.4 x 10^6 for a VDD = 0.68 V corresponds to 10 nm technology node. We further study the impact of randomly distributed Stone Wales {SW} defects in these hybrid structures and only 2.52% degradation of ON current is observed for SW defect density of 6.35%.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to improve the performance of MOSFET at the 10 - nanometer technology node by introducing boron - nitride (BN) - embedded armchair graphene nanoribbon (a - GNR), especially in the presence of Stone - Wales defects. Specifically, the research focuses on the following aspects: 1. **Analysis of material properties**: - Calculate material properties such as band gap, effective mass, and density of states of a - GNR - BN hybrid nanoribbons with different geometric configurations (3p, 3p + 1, 3p + 2) through density functional theory (DFT). - Use the non - equilibrium Green's function (NEGF) method for self - consistent Poisson - Schrödinger simulations to evaluate the influence of these material parameters on the performance of MOSFET devices. 2. **Evaluation of device performance**: - Calculate and analyze the output characteristics of MOSFETs under different configurations, such as \(I_D - V_D\), \(I_D - V_G\), transconductance \(g_m - V_G\), cutoff frequency, \(I_{ON}/I_{OFF}\) ratio, drain - induced barrier lowering (DIBL), and subthreshold slope (SS). - Study the device performance under pure ballistic transport conditions when the channel length is 10 nanometers. 3. **Study of defect influence**: - By introducing randomly distributed Stone - Wales defects, study their influence on the performance of hybrid nanoribbon MOSFETs. In particular, explore the influence on the on - state current (ON current) when the defect density is 6.35%, and find that only 2.52% degradation is observed. In summary, this paper aims to explore the potential of BN - embedded a - GNR as a MOSFET channel material at the 10 - nanometer technology node and evaluate its performance stability in the presence of structural defects.

Performance Analysis of Boron Nitride Embedded Armchair Graphene Nanoribbon MOSFET with Stone Wales Defects

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Restraining Strategy of the Stone–Wales Defect Effect on Graphene Nanoribbon MOSFETs

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Computational study of bilayer armchair graphene nanoribbon tunneling field-effect transistors for digital circuit design

Performance Comparison of 2D Mono-Elemental (X-enes) Armchair Nanoribbon Schottky Barrier Field Effect Transistors

Energy Gap Tunable Graphene Antidot Nanoribbon MOSFET: A Uniform Multiscale Analysis from Band Structure to Transport Properties

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Pocket doping method on Improving the Performance of Graphene Nanoribbons Tunneling FET

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

H/O Edge Passivated B/N Co-Doped Armchair Graphene Nanoribbon Field-Effect Transistors, Based on First Principles.