What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Giant Magnetoresistance (GMR) induced by spin - polarized current in the junction of two ferromagnets (F1/TI/F2) on the surface of a topological insulator**. Specifically, the author studied how to increase or decrease the value of the giant magnetoresistance by adjusting the spin - polarized current when two ferromagnets are deposited on the diffusive surface of a topological insulator. This adjustment is achieved by controlling the magnetization configuration. It is pointed out in the paper that the non - equilibrium spin - polarized current acts as an effective electrochemical potential in this structure, thus affecting the characteristics of the magnetoresistance. ### Main problems and solutions 1. **Problem background**: - In the junction where traditional metals or insulators are sandwiched between two ferromagnets, the magnetoresistance depends on the direction of magnetization. - Topological insulators (TI), due to their special electronic properties, especially on their surface states, may exhibit abnormal electromagnetic phenomena, which can enhance the magnitudes of charge and spin currents. 2. **Research objectives**: - Explore how to use spin - polarized current to generate a giant magnetoresistance effect in the ferromagnet junction on the surface of a topological insulator. - Study how this effect is different from the magnetoresistance in the traditional metal - ferromagnet junction. 3. **Research methods**: - Use the spin - diffusion equation to describe the charge transport on the surface of a topological insulator. - Analyze the influence of spin - polarized current on the voltage drop and derive the magnetoresistance expression. 4. **Key findings**: - The magnetoresistance includes not only the Ohmic resistance term but also an abnormal term that depends on the directions of the two magnetizations. - This abnormal term is determined by the injected and extracted spin - polarized currents, and the magnitude of the magnetoresistance can be significantly changed by adjusting the magnetization configuration. - In the antiparallel magnetization configuration, the boundary term exists and can lead to a huge change in the magnetoresistance; while in the parallel configuration, the boundary term disappears. 5. **Application prospects**: - This new type of magnetoresistance effect may provide guidance for the design of future low - energy - consumption magnetoelectronic devices, especially for realizing low - power - consumption charge transport using topological insulator materials. ### Formula summary - Diffusion equation of spin - polarized current: \[ \dot{s}_y=\frac{3D}{2}\nabla_x^2 s_y-\frac{s_y}{\tau}+\frac{v_F}{2e}\nabla_x N_e \] - Expression of voltage drop: \[ V = V_O+V_s \] where \[ V_O=\frac{2}{e^2\ell\nu v_F}\int_{-L/2}^{L/2}dx(I + e v_F s_y^2) \] \[ V_s=\frac{2}{e\ell\nu}\int_{-L/2}^{L/2}dx s_y^1 \] - Total magnetoresistance: \[ R_{\sigma\sigma'}=R_O+R_s^{\sigma\sigma'} \] where \[ R_O=\frac{L}{e^2\nu v_F\ell} \] \[ R_s^{\sigma\sigma'}=\frac{\eta_1-\eta_2}{e^2\nu v_F} \] Through these formulas, the author shows that under a specific magnetization configuration, the magnetoresistance can change significantly and even a huge negative magnetoresistance effect can occur.

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