Abstract:We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic proximity effect to the ferromagnetic layers. The magnetization of ferromagnetic layers can be changed by applying an external magnetic field or by varying thickness of the topological insulator (owing to the interlayer exchange coupling). The change in the magnetic configuration of the system affects the transport properties of the surface electronic states. Using the Green function formalism, we calculate spin polarization, anomalous Hall effect, and magnetoresistance of the system. We show, among others, that by tuning the gate voltage and magnetizations of the top and bottom FM layers, one can observe the topological transition to the anomalous quantum Hall state.

What problem does this paper attempt to address?

The problem this paper attempts to address is the study of the electronic and topological properties of a topological insulator (TI) thin film sandwiched between two ferromagnetic insulators, particularly the transport characteristics under external gate voltage and different magnetization configurations. Specifically, the paper focuses on the following aspects: 1. **Magnetic Proximity Effect**: Due to the magnetic proximity effect of the ferromagnetic layers on the surface states of the topological insulator, the surface states exhibit magnetization. 2. **Impact of Magnetization Configuration**: By changing the magnetization direction of the ferromagnetic layers (parallel or antiparallel), the transport properties of the system can be regulated. 3. **Anomalous Hall Effect**: The paper calculates the spin polarization, anomalous Hall effect, and magnetoresistance of the system, and explores how these properties change with gate voltage and magnetization configuration. 4. **Topological Phase Transition**: By adjusting the gate voltage and the magnetization direction of the ferromagnetic layers, a topological phase transition from a trivial insulator state to a quantum anomalous Hall insulator state can be observed. The main goal of the paper is to reveal the topological and transport properties in such hybrid structures through theoretical calculations and analysis, providing a theoretical foundation for future applications in spintronics and low-power electronic devices.

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