Abstract:The topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films emerged as promising topological surface-state-based spintronic devices, most notably in their efficiency of current-induced spin torque. Using a lattice model, we reveal that the surface-state Dirac cone of the TI can gradually merge into or be highly intertwined with the FMM bulk bands, and the surface states percolate into the FMM and eventually hybridize with the quantum well states therein. The magnetization can distort the spin-momentum locking of the surface states and yield an asymmetric band structure, which causes a laminar flow of room-temperature persistent charge current. Moreover, the proximity to the FMM also promotes a persistent laminar spin current. Through a linear response theory, we elaborate that both the surface state and the FMM bulk bands contribute to the current-induced spin torque, and their real wave functions render the spin torque predominantly fieldlike, with a magnitude highly influenced by the degree of the percolation of the surface states. On the other hand, impurities can generate a dampinglike torque, produce a torque even when the magnetization points in plane and orthogonal to the current direction, and moreover strongly suppress the Edelstein effect at the surface of the topological insulator.

What problem does this paper attempt to address?

This paper aims to explore the issues of spin torque and persistent current in topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films. Specifically, the paper focuses on the following aspects: 1. **Surface State Penetration**: - The paper reveals through a lattice model how the Dirac cone of the TI surface state gradually mixes with the bulk bands of the FMM and penetrates into the FMM, eventually hybridizing with quantum well states. - Magnetization distorts the spin-momentum locking of the surface state, leading to an asymmetric band structure, which results in a persistent charge current at room temperature. 2. **Spin Torque**: - Through linear response theory, the paper explains in detail that both the surface state and the bulk bands of the FMM contribute to the current-induced spin torque. - The real wave function of the penetrating surface state makes the spin torque primarily field-like, and its magnitude is highly influenced by the degree of surface state penetration. - Impurities can generate damping-like spin torque, which still exists when the magnetization direction is parallel to the current direction. 3. **Types of Topological Surface State Penetration**: - The paper distinguishes between two types of band structures: clean type and submerged type. - In the clean type band structure, the Dirac cone gradually mixes with the bulk bands of the FMM; in the submerged type band structure, the Dirac cone penetrates deeply into the bulk bands of the FMM, leading to a high degree of hybridization between the surface state and the FMM quantum well states. 4. **Persistent Current**: - When the magnetization direction is parallel to the interface, an asymmetric dispersion relation appears in the system, leading to a localized persistent charge current. - This current exists in both the TI region and the FMM region, and the flow directions at different vertical positions are opposite, overall canceling each other out. 5. **Spin Current**: - After contacting the FMM, even if the chemical potential is at the Dirac point, a balanced spin current still appears in the system. - The spatial distribution and magnitude of the spin current remain essentially unchanged for any magnetization direction, with only slight differences. 6. **Magnetoelectric Response**: - The paper calculates the current-induced spin accumulation through linear response theory and analyzes the impact of impurities on the magnetoelectric effect. - Impurities significantly reduce the spin polarization at the free surface, which is consistent with previous semiclassical analyses. In summary, this paper reveals important phenomena such as topological surface state penetration, spin torque, and persistent current through a systematic study of TI/FMM bilayer thin films, providing detailed theoretical explanations.

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