Electric-field Control of Spin–orbit Torque in a Magnetically Doped Topological Insulator
Yabin Fan,Xufeng Kou,Pramey Upadhyaya,Qiming Shao,Lei Pan,Murong Lang,Xiaoyu Che,Jianshi Tang,Mohammad Montazeri,Koichi Murata,Li-Te Chang,Mustafa Akyol,Guoqiang Yu,Tianxiao Nie,Kin L. Wong,Jun Liu,Yong Wang,Yaroslav Tserkovnyak,Kang L. Wang
DOI: https://doi.org/10.1038/nnano.2015.294
2016-01-01
Abstract:Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.