Dielectric Environment Effect on Carrier Mobility of Graphene Double-Layer Structure

Kazuhiro Hosono,Katsunori Wakabayashi

DOI: https://doi.org/10.48550/arXiv.1307.5972

2013-07-23

Abstract:We have theoretically studied the dielectric environment effect on the charged-impurity-limited carrier mobility of graphene double-layer structure (GDLS) on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. It is pointed out that the carrier mobility strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. Moreover, the conditions to improve the charged-impurity-limited carrier mobility of the GDLS are evaluated.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **The carrier mobility in the graphene double - layer structure (GDLS) is affected by the dielectric environment, especially the influence of the dielectric constant of the intermediate barrier layer on the carrier mobility**.

Specifically, the author explored the following issues through theoretical research:
1. **The relationship between carrier mobility and the dielectric constant of the intermediate barrier layer**: When the distance between the two layers of graphene is greater than the reciprocal of the Fermi wave vector, how does the carrier mobility depend on the dielectric constant of the barrier layer?
2. **Conditions for improving carrier mobility**: Under what conditions can the carrier mobility limited by charge impurities be improved by selecting appropriate dielectric materials?
3. **The specific influence of barrier layers with different thicknesses and dielectric constants on carrier mobility**: Especially in thinner and thicker graphene double - layer structures, how do different dielectric environments affect the scattering mechanism and mobility of carriers?

### Main findings of the paper
- When the distance between the two layers of graphene is small (\(d \lesssim 0.1 \, \text{nm}\)), the carrier mobility is hardly affected by the dielectric constant of the intermediate barrier layer.
- As the distance between the two layers of graphene increases, the influence of the dielectric constant of the intermediate barrier layer on the carrier mobility becomes significant. In particular, when \(k_F d \gg 1\), the carrier mobility strongly depends on the dielectric constant of the intermediate barrier layer.
- For thicker graphene double - layer structures (such as \(d = 3 \, \text{nm}\) and \(d = 15 \, \text{nm}\)), using a material with a high dielectric constant as the intermediate layer can significantly improve the carrier mobility.
- For thinner graphene double - layer structures (such as \(d = 0.7 \, \text{nm}\)), choosing a combination with a dielectric constant ratio of \(\epsilon_2 / \epsilon_3 \lesssim 1\) can more effectively improve the carrier mobility, which is due to the inter - layer screening effect caused by the stronger inter - layer coupling.

### Research methods
Based on the **Boltzmann transport theory**, the author considered the Coulomb interaction with static screening and calculated the screened Coulomb potential using the random - phase approximation (RPA). By analyzing the scattering rate and mobility of carriers in different dielectric environments, the above conclusions were drawn.

These research results provide theoretical guidance for the design and optimization of new functional electronic devices based on graphene.