Abstract:We theoretically propose an experiment to determine the penetration depth of a transverse spin current using a nonlocal spin valve with three ferromagnetic (F) layers, where the F_1, F_2, and F_3 layers act as the spin injector, detector, and absorber, respectively. We show that the penetration depth can be evaluated by measuring the dependence of the spin signal (magnetoresistance) on the thickness of the F_3 layer.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to determine the penetration depth of the transverse spin current. Specifically, the author proposes an experimental scheme to measure the penetration depth of the transverse spin current by using a non - local spin valve structure with three ferromagnetic layers (F1, F2 and F3).
### Background and Problem Description
In the field of spintronics, especially in the study of spin transport in nanostructured ferromagnetic materials, the penetration depth of the transverse spin current is an important parameter for characterizing its spatial spin relaxation characteristics. However, compared with the study of longitudinal spin current, the research on transverse spin current is relatively scarce. Therefore, determining the penetration depth of the transverse spin current is of great significance for understanding the spin transport mechanism and developing new spintronic devices.
### Proposed Solution
The author proposes an experimental method based on a non - local geometric structure, which consists of three ferromagnetic layers (F1, F2 and F3) and one non - magnetic layer (N). Among them:
- The F1 layer serves as a spin injector.
- The F2 layer serves as a spin detector.
- The F3 layer serves as a spin absorber.
By changing the thickness of the F3 layer and measuring the change in magnetoresistance of the F2 layer, the penetration depth of the transverse spin current can be evaluated. Specifically, the change in the thickness of the F3 layer will affect the absorption amount of the transverse spin current, thereby affecting the magnetoresistance signal of the F2 layer. Therefore, by measuring the change in magnetoresistance with the thickness of the F3 layer, the penetration depth of the transverse spin current can be deduced.
### Advantages
Compared with the traditional method based on ferromagnetic resonance (FMR), this method has the following advantages:
1. **Unrestricted material selection**: There is no need to avoid the simultaneous resonance of two ferromagnetic layers.
2. **Does not depend on magnetization change**: Even if the magnetization of the F3 layer changes with the increase in thickness, it will not affect the measurement results.
### Experimental Design and Theoretical Analysis
The paper discusses in detail how to calculate the spin current at each F/N interface by solving the diffusion equation of spin accumulation, and shows the relationship between magnetoresistance and the thickness of the F3 layer at different penetration depths through numerical simulation. These analyses provide a theoretical basis for the experiment and verify the effectiveness of this method.
### Summary
The main contribution of this paper is to propose a novel and effective experimental method for determining the penetration depth of the transverse spin current. This result will help to deeply understand the spin transport mechanism and provide an important reference for the design of future spintronic devices.
### Related Formulas
In order to more accurately describe the relationship between spin current and spin accumulation, some key formulas are involved in the paper, for example:
1. The expression of spin current at the F/N interface:
\[
I_{F/N}^s=\frac{1}{4\pi}\left[\left(\frac{(1 - \gamma_{F/N}^2)}{2g_{F/N}}m\cdot(\mu_F-\mu_N)+he^{\gamma_{F/N}I_{F/N}}\right)m - g_{r}^{\uparrow\downarrow}(F/N)m\times(\mu_N\times m)-g_{i}^{\uparrow\downarrow}(F/N)\mu_N\times m+t_{r}^{\uparrow\downarrow}(F/N)m\times(\mu_F\times m)+t_{i}^{\uparrow\downarrow}(F/N)\mu_F\times m\right]
\]
2. The diffusion equation of spin accumulation in the N layer:
\[
\frac{d^2\mu_N}{dx^2}=\frac{1}{\lambda_N^2}\mu_N
\]
3. The calculation formula of magnetoresistance:
\[
R = R^{(1)}+R^{(2)}
\]
where,
\[
R^{(1)}=-\beta_{F2}\frac{S_{F2}}{2eI}[m_2\cdot\mu_{F2}(z = d_{F2})-m_2\cdot