Magnetic field dependent impact ionization in InSb

Jinki Hong,Taeyueb Kim,Sungjung Joo,Jin Dong Song,Suk Hee Han,Kyung-Ho Shin,Joonyeon Chang

DOI: https://doi.org/10.48550/arXiv.1206.1094

2012-06-06

Abstract:Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of magnetic fields on the impact ionization process in InSb (indium antimonide) materials and how this influence changes the carrier generation and recombination processes. Specifically, the authors focus on:

1. **The influence of magnetic fields on impact ionization**:
- Impact ionization refers to the process in which electrons obtain sufficient kinetic energy to strike the lattice and generate new electron - hole pairs under high - bias voltages.
- Magnetic fields change the trajectory of electrons through the Lorentz force, thus affecting their ability to accumulate kinetic energy. This will lead to the suppression of impact ionization, and a larger electric field is required to achieve the same impact ionization effect.

2. **The relationship between surface recombination and magnetic fields**:
- The surface recombination rate depends on the direction of the magnetic field: in one direction, the magnetic field enhances surface recombination, and in the opposite direction, it suppresses surface recombination.
- This asymmetry results in a non - linear dependence of the threshold electric field on the magnetic field, specifically manifested as a combination of quadratic and linear terms.

3. **Design of magnetic - field - driven electrical switching devices**:
- By studying the influence of magnetic fields on impact ionization and surface recombination, electrical switching devices controlled by magnetic fields can be designed.
- When the applied magnetic field changes, the current will change significantly, thus achieving the switching function.

### Main conclusions

- A simple analytical expression is proposed to describe the relationship between the threshold electric field and the magnetic field:
\[
\frac{E}{E_0}-1 = \frac{1}{6}M(\mu B)^2-\frac{C_R}{C_G}\mu B
\]
where \(E\) is the threshold electric field, \(E_0\) is the threshold electric field in zero magnetic field, \(M\) and \(C_G\) are constants related to material parameters, \(C_R\) is a coefficient related to the surface recombination rate, \(\mu\) is the electron mobility, and \(B\) is the magnetic field intensity.

- The change of the threshold electric field depends on the polarity of the magnetic field:
- For the same surface recombination rate, the threshold electric field increases quadratically with the magnetic field.
- Different surface recombination rates introduce linear terms, making the dependence of the threshold electric field on the magnetic field asymmetric.

These research results provide a theoretical basis for the design of new magnetic - field - driven electrical switching devices.