Homogeneous switching in ultrathin ferroelectric BaTiO3 films

S. Ducharme,V. Fridkin,R. Gaynutdinov,M. Minnekaev,A. Tolstikhina,A. Zenkevich
DOI: https://doi.org/10.48550/arXiv.1204.4792
2012-04-21
Abstract:Switching kinetics in ultrathin epitaxial BaTiO3 films confirms the existence of the homogeneous switching (without domains) in ultrathin ferroelectric films. We suppose that the homogeneous switching in ultrathin films is a common phenomenon for all ferroelectric materials.
Mesoscale and Nanoscale Physics,Materials Science
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