Recent Advances and Trends in Cu–Cu Hybrid Bonding

J. Lau

DOI: https://doi.org/10.1109/TCPMT.2023.3265529

2023-03-01

Abstract:In this study, the recent advances and trends in Cu–Cu hybrid bonding will be investigated. Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges (opportunities), and examples of Cu–Cu bumpless hybrid bonding. Also, some recommendations will be provided.

Engineering,Materials Science

What problem does this paper attempt to address?

State-of-the-art of Cu-Cu Hybrid Bonding

John H Lau

DOI: https://doi.org/10.1109/tcpmt.2024.3367985

2024-01-01

Abstract:In this study, the state-of-the-art of Cu–Cu hybrid bonding will be investigated. Emphasis is placed on the design, materials, process, fabrications, reliability, challenges (opportunities), advantages and disadvantages, and examples of Cu–Cu bumpless hybrid bonding. Also, some recommendations will be provided.

engineering, manufacturing, electrical & electronic,materials science, multidisciplinary
A Review of Mechanism and Technology of Hybrid Bonding

Yipeng Xu,Yanping Zeng,Yi Zhao,Choonghyun Lee,Minhui He,Zongfang Liu

DOI: https://doi.org/10.1115/1.4065650

2024-07-25

Journal of Electronic Packaging

Abstract:Abstract With the development of semiconductor technology, traditional flip-chip bonding has been difficult to meet the high-density, high-reliability requirements of advanced packaging technology. As an advanced three-dimensional stacked packaging technology, Cu-SiO2 hybrid bonding technology can achieve high-density electrical interconnection without bumps, which expands the transmission performance and interconnection density of chips greatly. However, the investigation on Cu-SiO2 bonding is far from mature, and many researchers are studying Cu-SiO2 bonding passionately. There are many technologies that use different bonding mechanisms to achieve Cu-SiO2 bonding, which will affect the bonding strength directly. We review the mechanism and research progress of Cu-Cu bonding, SiO2-SiO2 bonding. What is more, we summarize the comparison of bonding conditions and bonding strength of various methods furtherly. According to the bonding mechanism, we propose some economical solutions for low-temperature Cu-SiO2 hybrid bonding, with the aim of providing certain references for the further development of advanced semiconductor packaging.

engineering, mechanical, electrical & electronic
Copper Wire Bonding: A Review

Hongliang Zhou,Andong Chang,Junling Fan,Jun Cao,Bin An,Jie Xia,Jingguang Yao,Xiaobin Cui,Yingchong Zhang

DOI: https://doi.org/10.3390/mi14081612

2023-08-16

Abstract:This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics and application areas are discussed. Additionally, we provide detailed insights into the impact of Free Air Ball (FAB) morphology on bonding reliability, including its effect on bond strength and formation mechanisms. Next, the reliability of Cu wire bonding is analyzed, with a focus on the impact of intermetallic compounds and corrosion on bonding reliability. Specifically, the formation, growth, and stability of intermetallic compounds at bonding interfaces are discussed, and their effects on bonding strength and reliability are evaluated. The detrimental mechanisms of corrosion on Cu wire bonding and corrosion inhibition methods are also analyzed. Subsequently, the applications of simulation in Cu wire bonding are presented, including finite element analysis and molecular dynamics simulations, which provide important tools for a deeper understanding of the bonding process and failure mechanisms. Finally, the current development status of Cu wire bonding is summarized, and future research directions are discussed.
Enhanced Cu-to-Cu direct bonding by controlling surface physical properties

Po-Hao Chiang,Sin-Yong Liang,Jenn-Ming Song,Shang-Kun Huang,Ying-Ta Chiu,Chih-Pin Hung

DOI: https://doi.org/10.7567/jjap.56.035503

IF: 1.5

2017-02-07

Japanese Journal of Applied Physics

Abstract:Cu-to-Cu direct bonding is one of the key technologies for three-dimensional (3D) chip stacking. This research proposes a new concept to enhance Cu-to-Cu direct bonding through the control of surface physical properties. A linear relationship between bonding strength and the value of the bonding face (H: subsurface hardness, R: surface roughness) was found. Low vacuum air plasma and thermal annealing were adopted to adjust the surface physical conditions. Instead of surface activation, an acceleration in copper atom diffusion due to plasma-induced compressive stress accounts for the improvement in bonding strength.

physics, applied
A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Xiuyu Shi,Jin Wang,Qian Wang,Hongwen He,Simin Wang,Heng Li,Menglong Sun,Jian Cai

DOI: https://doi.org/10.1109/icept50128.2020.9201931

2020-01-01

Abstract:Metal-dielectric hybrid bonding is a critical technique of inter-chip connections for 3D integration. In this work, a chip-level embedded hybrid bonding structure using Cu-Sn/BCB Bonding is proposed and realized. This embedded microbump structure with photosensitive BCB coated on the single side could be successfully developed without chemical mechanical polishing (CMP), while the cure temperature (250°C) of BCB is the same as that of Cu-Sn thermal compression bonding or solid-liquid interdiffusion (SLID). The deviation of misalignment could be reduced effectively due to the embedded bonding structure. Consecutive and void-free interface could be got at BCB-metal and BCB-Si boundary with optimized scale design of BCB patterns while the diameter/pitch of microbumps is 50μm/100μm, the thickness of bonding layer is approximately 10μm. Also, key factors of process for realizing good quality of bonding is discussed. The electrical test shows that interface of metal microbumps could be improved further. Besides, the die shear test shows good mechanical strength of this hybrid bonding structure as the shear strength of hybrid bonding area and pure BCB bonding area are over 13MPa and 19MPa, respectively.
Copper Bonding Technology in Heterogeneous Integration

Yoon-Gu Lee,Michael McInerney,Young-Chang Joo,In-Suk Choi,Sarah Eunkyung Kim

DOI: https://doi.org/10.1007/s13391-023-00433-4

IF: 3.151

2023-04-21

Electronic Materials Letters

Abstract:As semiconductor device scaling faces a severe technical bottleneck, vertical die stacking technologies have been developed to obtain high performance, high density, low latency, cost effectiveness and a small form factor. This stacking technology is receiving great attention from industry as a core technology from the point of view of recent heterogeneous integration technology. Most importantly, bonding using copper is aggressively studied to stack various wafers or dies and realize genuine three-dimensional packaging. Copper is emerging as the most attractive bonding material due to its fine-pitch patternability and high electrical performance with a CMOS-friendly process. Unfortunately, copper is quickly oxidized, and a high bonding temperature is required for complete Cu bonding, which greatly exceeds the thermal budget for the packaging process. Additionally, the size of Cu pads is decreasing to increase the density of interconnections. Therefore, various copper bonding methods have been studied to realize copper oxidation prevention, a low bonding temperature, and a fine-pitch Cu pad structure with a high density. Furthermore, recently, hybrid bonding, which refers to the simultaneous bonding of copper pads and surrounding dielectrics, has been considered a possible solution for advanced bonding technology. This paper reviews recent studies on various copper bonding technologies, including Cu/oxide hybrid bonding. Graphical

materials science, multidisciplinary
Study on copper-to-copper bonding of three-dimensional integrated circuits using the quasicontinuum method

Hoang-Giang Nguyen,Miao-Jing Wu,Te-Hua Fang

DOI: https://doi.org/10.1088/1402-4896/ad46cd

2024-05-17

Physica Scripta

Abstract:Cu-Cu bonding presents an attractive approach to bottom-up manufacturing, facilitating nanoparticle production, linking, and restoration. The ramifications of varying bonding depths and orientations exhibit distinct characteristics. At the same time, investigations into the material composition of nanoscale bonded pairs involve scrutiny of atomic slippage, strain distribution, and the force-displacement profile. The methodology simulates the Cu-Cu bonding process by implementing the quasi-continuum (QC) approach, constituting a multifaceted mixed molecular dynamics technique integrating atomistic and continuum methods. The analysis of results reveals variations in the Contact effect induced by the four orientations, along with discrepancies in the atomic slippage observed in distinct directions. Notably, a pronounced distinction is discernible in the directional movement. Specifically, the strained regions on the flat surface of the lower substrate, characterized by the directionality of X[001]-Y[110], exhibit a notably broader range of atomic slip compared to regions strained by alternative orientations. Furthermore, the directional alignment of X[110]-Y[111] illustrates that irrespective of whether the lower substrate's surface is flat or rough, the orientation of atomic slip diverges. In conclusion, our study employed a quasi-continuous method to explore the bonding efficacy of copper-to-copper interfaces on flat and irregular substrate surfaces. Through this approach, we scrutinized the distributions of strain, stress, average Newtonian force, and atom differential arrangement direction across different orientations.

physics, multidisciplinary
A Novel Nontraditional Approach to C2W Cu/SiO2 Hybrid Bonding

Han Jiang,Ziyu Liu,Chen Lin,Chuandong Li,Zeyu Ning,Lin Chen,Jeff Xu,Qingqing Sun

DOI: https://doi.org/10.1109/icept63120.2024.10668515

2024-01-01

Abstract:Chip-to-wafer (C2W) hybrid bonding is a promising technology in the three-dimensional integrated circuit (3D IC) area. For C2W Cu/SiO 2 hybrid bonding, the hydrophilic SiO 2 -SiO 2 pre-bonding step is very important because low pre-bonding strength will result in the hybrid bonding failure during the subsequent annealing process. Traditionally, ultralow dielectric surface roughness needs to be achieved through precisely controlled chemical mechanical polishing (CMP) to ensure good direct bonding quality. In this study, we proposed nontraditional pre-bonding process conditions by applying heat and high pressure simultaneously to relax the strict CMP process requirement for hybrid bonding. By using this unconventional pre-bonding approach, successful C2W Cu/SiO 2 hybrid bonding with high shear strength can be potentially achieved even with poor SiO 2 surface roughness. Various characterization experiments were performed to confirm the effectiveness of this nontraditional pre-bonding method.
Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Huang Chen,Xiuyu Shi,Jin Wang,Yang Hu,Qian Wang,Jian Cai

DOI: https://doi.org/10.1109/ECTC32696.2021.00086

2021-01-01

Abstract:High density, fine pitch wafer level bonding technology is necessary for heterogeneous integration. However, underfill would be a challenging when bonding pitch decreases. Hybrid bonding technology with metal-to-metal and passivation-to-passivation bonding simultaneously was considered as a feasible solution. In this work, a hybrid bonding scheme with asymmetric embedded Cu-Sn/Cu bumps structure was investigated. Photosensitive BCB used as passivation materials was coated on only one side of bonding pairs. This asymmetric structure allows for precise alignment. BCB curing and Cu-Sn Solid-liquid-diffusion bonding were both achieved under the temperature of 250°C. The thickness of BCB and metal was concisely designed considering the volume shrinking of polymer during bonding process. To achieve void free hybrid bonding interface, efforts were mainly paid to some key aspects. Surface pre-treatment were firstly introduced to ensure no oxidation and residual polymer on the surface of bumps before bonding. A combination of plasma and formic gas treatment were adopted. Furthermore, considering coefficients of thermal expansion (CTE) mismatch of BCB and embedded bumps, a compatible bonding process with well-matched temperature and stress was proposed and optimized to get a void-free bonding interface under the guidance of independent variable test result. Bonding interface microstructure was observed and mechanical test, electrical test of Kelvin and daisy-chain structure were performed to evaluate bonding quality, also reliability test which included HTST and TCT had been carried out. The results confirmed that embedded bump hybrid bonding would be a convincing technology for future 3D integration.
Enhanced reliability of Cu-Sn bonding through the microstructure evolution of nanotwinned copper

Xinyu Jin,Huahan Li,Yingying Sun,Zhiqin Chen,Peixin Chen,Hongwei Su,Ming Li,Yunwen Wu

DOI: https://doi.org/10.1016/j.actamat.2024.120524

IF: 9.4

2024-11-05

Acta Materialia

Abstract:Kirkendall voids are detrimental to the Cu-Sn bonding interface, causing the failure of the high-density package. Herein, the perpendicularly aligned nanotwinned Cu (p-ntCu) and the horizontally aligned nanotwinned Cu (h-ntCu) are prepared by controlling the electrodeposition procedure. The p-ntCu shows advantages both in fast-bonding process and in void suppression through the in-situ microstructure evolution. Compared with h-ntCu, the abundant perpendicularly aligned twin boundaries in p-ntCu provide fast interdiffusion paths to build a bonding interface. In the bonding process, p-ntCu grows to ultra-large-grained Cu with an average grain size of 6.68 μm. The reduced density of normal grain boundaries in p-ntCu lowers the Cu diffusion rate and contributes to more balanced interdiffusion at the bonding interface, which is confirmed by molecular dynamics simulation and kinetic calculations of intermetallic compound (IMC) growth. In addition, the low impurity content in p-ntCu further reduces the diffusion flux imbalance and limits the nucleation of Kirkendall vacancies. Consequently, the p-ntCu/Sn interface keeps void-free during 150 °C long-term thermal aging due to the synergistic effect of reduced grain-boundary diffusion and lower impurity content, which will be beneficial for achieving high-reliability Cu-Sn bonding.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Study on Nanoporous Graphene-Based Hybrid Architecture for Surface Bonding

Xiaohui Song,Mingxiang Chen,Jingshuang Zhang,Rui Zhang,Wei Zhang

DOI: https://doi.org/10.3390/nano12142483

IF: 5.3

2022-07-20

Nanomaterials

Abstract:Graphene-copper nanolayered composites have received research interest as promising packaging materials in developing next-generation electronic and optoelectronic devices. The weak van der Waal (vdW) contact between graphene and metal matrix significantly reduces the mechanical performance of such composites. The current study describes a new Cu-nanoporous graphene-Cu based bonding method with a low bonding temperature and good dependability. The deposition of copper atoms onto nanoporous graphene can help to generate nanoislands on the graphene surface, facilitating atomic diffusion bonding to bulk copper bonding surfaces at low temperatures, according to our extensive molecular dynamics (MD) simulations on the bonding process and pull-out verification using the canonical ensemble (NVT). Furthermore, the interfacial mechanical characteristics of graphene/Cu nanocomposites can be greatly improved by the resistance of nanostructure in nanoporous graphene. These findings are useful in designing advanced metallic surface bonding processes and graphene-based composites with tenable performance.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Han-Wen Hu,Kuan-Neng Chen

DOI: https://doi.org/10.1016/j.microrel.2021.114412

IF: 1.6

2021-12-01

Microelectronics Reliability

Abstract:Thermal-compression bonding (TCB) is the key technology to ensure vertical chip (or wafer) stacking in three-dimensional (3D) integration with higher I/O density than conventional soldering technology. For different TCB approaches, copper (Cu) to Cu bonding has always been the preferred candidate due to the excellent electrical and thermal properties of Cu, high mechanical strength of bonding interface, as well as compatibility and cost consideration in the packaging fabrication. However, high thermal budget of the bonding process caused by oxidation of Cu leads to issue of wafer warpage, bonding misalignment, and compatibility with back-end-of-line process. Therefore, this review paper first presents an extensive survey on the advance of low temperature Cu-based bonding technologies. In addition, the feasibility of CuCu bonding in the fine pitch applications is challenged by coplanarity issue of Cu pillars and insufficient gaps for filling. Accordingly, based on the progress of low temperature CuCu bonding, low temperature Cu/SiO2 hybrid bonding will be introduced as an emerging bonding technology to solve the coplanarity and filling issue, which can provide the great potential for 3D integration with ultra-high density of interconnection.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Development and Status of Cu Ball/Wedge Bonding in 2012

Martin Schneider-Ramelow,Ute Geißler,Stefan Schmitz,Wolfgang Grübl,Bernhard Schuch

DOI: https://doi.org/10.1007/s11664-012-2383-0

IF: 2.1

2013-01-05

Journal of Electronic Materials

Abstract:Starting in the 1980s and continuing right into the last decade, a great deal of research has been published on Cu ball/wedge (Cu B/W) wire bonding. Despite this, the technology has not been established in industrial manufacturing to any meaningful extent. Only spikes in the price of Au, improvements in equipment and techniques, and better understanding of the Cu wire-bonding process have seen Cu B/W bonding become more widespread—initially primarily for consumer goods manufacturing. Cu wire bonding is now expected to soon be used for at least 20% of all ball/wedge-bonded components, and its utilization in more sophisticated applications is around the corner. In light of this progress, the present paper comprehensively reviews the existing literature on this topic and discusses wire-bonding materials, equipment, and tools in the ongoing development of Cu B/W bonding technology. Key bonding techniques, such as flame-off, how to prevent damage to the chip (cratering), and bond formation on various common chip and substrate finishes are also described. Furthermore, apart from discussing quality assessment of Cu wire bonds in the initial state, the paper also provides an overview of Cu bonding reliability, in particular regarding Cu balls on Al metalization at high temperatures and in humidity (including under the influence of halide ions).

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Yuan-Chiu Huang,Yu-Xian Lin,Chien-Kang Hsiung,Tzu-Heng Hung,Kuan-Neng Chen

DOI: https://doi.org/10.3390/nano13172490

2023-09-04

Abstract:Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper-copper (Cu-Cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. However, one of the major challenges of Cu-Cu bonding is the high thermal budget of the bonding process caused by Cu oxidation, which can result in wafer warpage and other back-end-of-line process issues in some cases. Thus, for specific applications, reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes. This paper first reviews the advancements in low-temperature Cu-based bonding technologies for advanced packaging. Various low-temperature Cu-Cu bonding techniques such as surface pretreatment, surface activation, structure modification, and orientation control have been proposed and investigated. To overcome coplanarity issues of Cu pillars and insufficient gaps for filling, low-temperature Cu-Cu bonding used, but it is still challenging in fine-pitch applications. Therefore, low-temperature Cu/SiO2, Cu/SiCN, and Cu/polymer hybrid bonding have been developed for advanced packaging applications. Furthermore, we present a novel hybrid bonding scheme for metal/polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (CMP) process.
Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Zilin Wang,Wenjie Zhao,Zheyao Wang

DOI: https://doi.org/10.1109/led.2024.3471821

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:This paper reports a 150 °C low-temperature and CMP-free Cu-Cu bonding of porous Cu bumps at 10 MPa bonding pressure. A pretreatment method is developed to fabricated porous Cu bumps from conventional Cu-Sn bumps using a gas mixture of oxygen and formic acid at 200 °C. The Cu-Sn inter-metallic compounds (IMCs) react with the gas mixture, and transform to a coral-like porous Cu layer that consists of Cu particles. The porous Cu layer has a large surface area and allows fast Cu diffusion and grain growth for Cu direct bonding at low temperatures. The compressible feature of the porous Cu layer allows it to deform and adapt the height variations of the bumps without CMP. Porous Cu bumps with a dimension of 4 μm and a pitch of 15 μm have been bonded at 150 °C, 10 MPa, and 30 min. Mechanical, electrical, and thermal tests show that the bonds have good strength, low resistivity, and high reliability.
Recent Advances in W–Cu Composites: A Review on the Fabrication, Application, Property, Densification, and Strengthening Mechanism

Baoguang Zhang,Kun Yang,Zhifu Huang,Jian Wang

DOI: https://doi.org/10.1002/adem.202301204

IF: 3.6

2023-11-20

Advanced Engineering Materials

Abstract:Tungsten–copper (W–Cu) composite is a pseudoalloy prepared by powder metallurgy method with tungsten and copper as the main components, which are widely used in electrical contacts, electrical discharge machining electrodes, electronic packaging, aerospace, and military fields due to its good conductivity, thermal conductivity, high melting point, high electrical breakdown strength, low contact resistance, high welding resistance, and high heat resistance. Herein, the recent advances of W–Cu composites are reviewed systematically. First, the preparative techniques of W–Cu composites are introduced in detail, and their advantages and disadvantages are evaluated objectively. Second, an introduction of the main application fields and corresponding characteristics advantages for W–Cu composites are provided. Subsequently, the densification techniques and strengthening mechanisms and their effects on microstructure, mechanical properties, and physical properties of W–Cu composites are mainly discussed. Finally, based on a comprehensive review of W–Cu composites, its future development trends and potential research challenges are summarized and prospected.

materials science, multidisciplinary
Development of copper wire bonding technology

Huang Hua,Du Dong,Chang Baohua

DOI: https://doi.org/10.3969/j.issn.1001-1382.2008.12.005

2008-01-01

Abstract:Copper wire bonding is considered to be able to replacing gold wire bonding in the field of interconnection of ICs(integrate circuits). This paper presents the recent development including bonding process design,bond strength evaluations,bonding mechanism and modern research method of copper wire bonding. The results and shortage of the present research work are discussed. The trend of copper wire bonding research is also pointed out,which will be helpful for the widely using of copper wire in IC assembly processes and quickly and nicely developing of IC industry in China.
Pd-coated Cu wire bonding technology: Chip design, process optimization, production qualification and reliability test for high reliability semiconductor devices

Inderjit Singh,Ivy Qin,Hui Xu,Cuong Huynh,Shin Low,Horst Clauberg,Bob Chylak,Viola L. Acoff

DOI: https://doi.org/10.1109/ectc.2012.6248971

2012-05-01

Abstract:Due to the increasing cost of Au, the semiconductor industry has gone through a dramatic shift away from Au wire bonding to Cu wire bonding. Pd-coated Cu (PdCu) wire has become the favored wire choice over bare Cu wire for fine pitch applications. The advantages of PdCu wire include better HAST reliability results and a more stable stitch bond process window. This paper will examine the critical aspect of bringing Cu and PdCu wire technology from chip design to wire bonding process development to qualification, reliability test and final production. Chip design needs to take into consideration the requirement of Cu wire bonding. Compared to Au wire bonding, Cu wire bonding has many more challenges including pad material push out (pad splash), Al layer peel off (pad peel) and crack in the barrier and dielectric layer (pad crack). This paper considers the impact of various pad structures & metallization to PdCu wire assembly quality and reliability. Because of the unique challenges facing Cu wire bonding processes, wire bonding process development becomes one of the bottlenecks in the assembly process. To shorten the development cycle and ease the requirement for extensive Design Of Experiments (DOEs), a new model based approach was developed and implemented on the latest Cu wire bonder. With this approach, the bonding parameters are calculated based on numerical models. It reduces the need for parameter optimization. This paper will also discuss how modifications and newly developed metrology tools are used in the optimization of PdCu wire. Because of the narrow process window in Cu and PdCu wire bonding, achieving reliable production and high yields requires the process to have a sustainable process window and be portable and transferable to multiple machines and be robust across material variations commonly encountered in a production environment. This paper examines the methods used in quantifying process windows and portability of the wire bonding equipment to ensure high reliability for the end product. Development and optimization of PdCu wire bonding requires a fundamental understanding of interfacial reaction in bonds during both bonding and reliability tests, as proper formation of intermetallic compounds is beneficial to bonding strength. While the knowledge of intermetallic growth in bare copper wire bonds on aluminum has become well established in the past five years, there is little literature in terms of the morphology and growth of intermetallic phase between PdCu wire and Al pad. This paper ascertains the intermetallic growth and phase transformation, retention of aluminum oxide, and behavior of palladium in PdCu wire bonds using high resolution transmission electron microscopy (HRTEM) of dual beam focused ion beam (FIB) thinned specimens.
Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Zijian Wu,Jian Cai,Qian Wang,Junqiang Wang

DOI: https://doi.org/10.1063/1.4978490

IF: 1.697

2017-01-01

AIP Advances

Abstract:Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification. The bonding structure with Ti adhesive/barrier layer and Cu substrate layer was fabricated on both surfaces first. Loose structure with Cu NPs was then deposited by magnetron sputtering in a high pressure environment. Solid state Cu-Cu bonding process was accomplished at 200°C for 3min under the pressure of 20MPa. Die shear test was carried out and an average bonding strength of 36.75MPa was achieved. The analysis of fracture surface revealed a high-reliability bonding structure. According to cross-sectional observations, a void-free intermediate Cu layer with thickness around 10nm was obtained. These results demonstrated that a reliable low temperature time-saving Cu-Cu bonding was realized by Cu NPs between the bonding pairs. This novel bonding method might be one of the most attractive techniques in the application of ultra-fine pitch 3D integration.
Recent Trends in Group 11 Hydrogen Bonding

Alba Sorroche,Félix Reboiro,Miguel Monge,José María López-de-Luzuriaga

DOI: https://doi.org/10.1002/cplu.202400273

2024-05-21

ChemPlusChem

Abstract:Conventional hydrogen bonding (H‐bonding) has been extensively studied in organic and biological systems. However, its role in transition metal chemistry, particularly with Group 11 metals (i.e. Cu, Ag, Au) as hydrogen bond acceptors, remains relatively unexplored. Through a combination of experimental techniques, such as Nuclear Magnetic Resonance (NMR), Infrared spectroscopy (IR), X‐Ray Diffraction (XRD), and computational calculations, several aspects of H‐bonding interactions with Group 11 metals are examined, shedding light on its impact on structural motifs and reactivity. These include bond strengths, geometries, and effects on electronic structures. Understanding the intricacies of hydrogen bonding within transition metal chemistry holds promise for various applications, including catalytic transformations, the construction of molecular assemblies, synthesis of complexes displaying anticancer activities, or luminescence applications (e.g. Thermally Activated Delayed Fluorescence, TADF). This review encompasses the most significant recent advances, challenges, and future prospects in this emerging field.

chemistry, multidisciplinary

Recent Advances and Trends in Cu–Cu Hybrid Bonding

State-of-the-art of Cu-Cu Hybrid Bonding

A Review of Mechanism and Technology of Hybrid Bonding

Copper Wire Bonding: A Review

Enhanced Cu-to-Cu direct bonding by controlling surface physical properties

A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Copper Bonding Technology in Heterogeneous Integration

Study on copper-to-copper bonding of three-dimensional integrated circuits using the quasicontinuum method

A Novel Nontraditional Approach to C2W Cu/SiO2 Hybrid Bonding

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Enhanced reliability of Cu-Sn bonding through the microstructure evolution of nanotwinned copper

Study on Nanoporous Graphene-Based Hybrid Architecture for Surface Bonding

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Development and Status of Cu Ball/Wedge Bonding in 2012

Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Recent Advances in W–Cu Composites: A Review on the Fabrication, Application, Property, Densification, and Strengthening Mechanism

Development of copper wire bonding technology

Pd-coated Cu wire bonding technology: Chip design, process optimization, production qualification and reliability test for high reliability semiconductor devices

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Recent Trends in Group 11 Hydrogen Bonding