Structural, electrical and optical characterizations of yttrium doped aluminum nitride thin films before and after ions irradiation

Asmat Ullah,Muhammad Usman,Wang Qingyu,Iftikhar Ahmad,Muhammad Maqbool

DOI: https://doi.org/10.1016/j.optmat.2021.111097

IF: 3.754

2021-06-01

Optical Materials

Abstract:Yttrium (Y) doped aluminum nitride (AlN) thin films are prepared using reactive magnetron sputtering method in a nitrogen atmosphere at room temperature. Thermal annealing at a temperature of 900 °C is performed after the deposition for the homogeneity and removal of porosity in the films. The prepared samples are irradiated at a proton fluence of 1 × 1014 ions/cm2 with an energy of 335 keV. Electrical, optical, and structural characterization of as-deposited and irradiated films are performed using four-point probe method, Fourier transform infrared spectroscopy (FTIR), and x-ray diffraction (XRD) respectively, to determine the irradiation induced defects. The as-deposited samples are studied using Rutherford backscattering spectroscopy (RBS) for their stoichiometry and thickness of deposited films. It is concurred from the results that irradiation has impacted the crystallinity, electrical resistivity, and the optical properties of the thin films.

materials science, multidisciplinary,optics

What problem does this paper attempt to address?

The paper primarily explores the changes in structural, electrical, and optical properties of yttrium (Y)-doped aluminum nitride (AlN) films before and after ion irradiation. Specifically, the research team prepared Y-doped AlN films in a nitrogen atmosphere using reactive magnetron sputtering and performed thermal annealing at 900°C to improve film uniformity and remove porosity. Subsequently, these films were subjected to proton irradiation with an energy of 335 keV and a dose of 1×10^14 ions/cm². The electrical, optical, and structural properties of the films before and after irradiation were characterized using the four-point probe method, Fourier-transform infrared spectroscopy (FTIR), and X-ray diffraction (XRD).

The main objective of the paper is to investigate how ion irradiation affects the performance of Y-doped AlN films, including changes in crystallinity, resistivity, and optical properties. The study found that ion irradiation led to an increase in the crystallinity of the films, a rise in resistivity, and changes in optical properties. These results are significant for understanding the impact of irradiation on wide bandgap semiconductor materials, especially in high-voltage applications.