Abstract:We report on results of nonequilibrium transport measurements made on thin films of germanium-telluride (Ge_xTe) at cryogenic temperatures. Owing to a rather large deviation from stoichiometry (app. 10% of Ge vacancies), these films exhibit p-type conductivity with carrier-concentration N>10^20cm^(-3) and can be made either in the diffusive or strongly-localized regime by a judicious choice of preparation and post-treatment conditions. In both regimes the system shows persistent photoconductivity following excitation by a brief exposure to infrared radiation. Persistent photoconductivity is also observed in GexTe samples alloyed with Mn. However, in both Ge_xTe and GeMn_xTe_y the effect is much weaker than that observable in GeSb_xTe_y alloys suggesting that antimony plays an important role in the phenomenon. Structural studies of these films reveal an unusual degree of texture that is rarely realized in strongly-disordered systems with high carrier-concentrations. Anderson-localized samples of Ge_xTe exhibit non-ergodic transport which are characteristic of intrinsic electron-glasses, including a well developed memory-dip and slow relaxation of the excess conductance created in the excited state. These results support the conjecture that electron-glass effects with inherently long relaxation times is a generic property of all Anderson-localized systems with large carrier-concentration.

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Antilocalization effect in HgCdTe film

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Weak antilocalization in the transition metal telluride Ta$_2$Pd$_3$Te$_5$

Weak Antilocalization in the Transition Metal Telluride Ta2Pd3Te5

Resonant Nature of Intrinsic Defect Energy Levels in Pbte Revealed by Infrared Photoreflectance Spectroscopy

Optical and Electronic Characterization on HgCdTe Materials

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Band Shift of Pb1-Xsrx Te Thin Film and Its Band Alignment Using Synchrotron Radiation Photoelectron Spectroscope

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Impurity Effect on Weak Antilocalization in the Topological Insulator Bi2Te3.

High-Density Arrangement of Nanoscale Regions with Tellurium Interstitial Atoms and Silver/Copper Vacancies in AgCuTe Thermoelectric Materials

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Electron-electron interactions and weak antilocalization in few-layer Zr Te 5 devices

Nonequilibrium transport and Electron-Glass effects in thin GexTe films

Composition Control and Surface Defects of MBE-grown HgCdTe

Cathodic codeposition of Cd and Te on HgCdTe crystal

Study Of Impurity States In P-Type Hg1-Xcdxte Using Far-Infrared Spectroscopy

Transport Properties Related to Two-Dimensional Surface States in Gate-Tunable Bi0.1Pb0.9Te Thin Films

Ag doping of p-type HgCdTe grown by LPE

Weak Antilocalization And Electron-Electron Interaction In Coupled Multiple-Channel Transport In A Bi2se3 Thin Film