Weak Antilocalization in the Transition Metal Telluride Ta2Pd3Te5

Wen-He Jiao,Hang-Qiang Qiu,Wuzhang Yang,Jin-Ke Bao,Shaozhu Xiao,Yi Liu,Yuke Li,Guang-Han Cao,Xiaofeng Xu,Zhi Ren,Peng Zhang
DOI: https://doi.org/10.1103/physrevb.108.245145
IF: 3.7
2023-01-01
Physical Review B
Abstract:We report transport studies on the layered van der Waals topological crystalline insulator Ta2Pd3Te5. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tends to saturate at low temperatures. Low-temperature magnetotransport shows that Ta2Pd3Te5 exhibits weak antilocatization (WAL) effect in both perpendicular orientation and parallel orientation, suggesting a contribution of the WAL effect from both topological edge states and bulk states. By measuring the anisotropic magnetoconductance and then subtracting the contribution of bulk states, the WAL effect associated with topological edge states can be revealed and analyzed quantitatively based on the two-dimensional Hikami-Larkin-Nagaoka model. Our results have important implications in understanding the WAL phenomena in Ta2Pd3Te5.
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