Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

K. S. Vasu,Biswanath Chakraborty,S. Sampath,A. K. Sood

DOI: https://doi.org/10.1016/j.ssc.2010.05.018

2010-05-13

Abstract:We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5{\mu}m x 5{\mu}m show a single 2D band at 2687 cm-1, characteristic of a single layer graphene. The two probe current - voltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 {\mu}m using a.c. dielectrophoresis show ohmic behavior with a resistance of ~ 37k{\Omega}. The temperature dependence of the resistance (R) of RGO measured between temperatures 305 K to 393 K yields temperature coefficient of resistance [dR/dT]/R ~ -9.5x10-4 K-1, same as mechanically exfoliated single layer graphene. The field effect transistor action was obtained by electrochemical top-gating using solid polymer electrolyte (PEO + LiClO4) and Pt wire. Ambipolar nature of graphene flakes is observed upto a doping level of ~ 6x1012/cm2 and carrier mobility of ~ 50 cm2V-1sec-1. The source - drain current characteristics shows a tendency of current saturation at high source - drain voltage which is analyzed quantitatively by a diffusive transport model.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to show how to fabricate and characterize top - gated field - effect transistors (FETs) of monolayer reduced graphene oxide (RGO) through dielectrophoresis technology. Specifically, the authors aim to:

1. **Verify the electrical properties of the RGO monolayer**: Through Raman spectroscopy and temperature - dependent resistance measurement, confirm that the RGO monolayer has physical properties similar to those of mechanically exfoliated monolayer graphene.

2. **Achieve electrical regulation of the top - gated FET**: Utilize solid - state polymer electrolyte (PEO + LiClO₄) and platinum wire as top - gate materials to study the electrical behavior of the RGO monolayer under different gate voltages, especially its ambipolar transport characteristics and carrier mobility.

3. **Explain the non - linear current - voltage characteristics**: Analyze the non - linear current - voltage characteristics at high source - drain voltages through the diffusion transport model and quantitatively explain these phenomena.

### Main problems and solutions

- **Problem 1: Preparation and characterization of monolayer RGO**
- **Solution**: Synthesize graphene oxide (GO) through Hummer's method, and then reduce it to RGO using hydrazine hydrate. Characterize RGO through atomic force microscopy (AFM), ultraviolet - visible spectroscopy (UV - Vis) and Raman spectroscopy to confirm its monolayer structure and optical properties.

- **Problem 2: Electrical performance of the top - gated FET**
- **Solution**: Deposit RGO between pre - fabricated source - drain electrodes through dielectrophoresis technology to construct a top - gated FET. Use solid - state polymer electrolyte (PEO + LiClO₄) as the top - gate dielectric to study the electrical response of RGO under different gate voltages. The results show that RGO has ambipolar transport characteristics and exhibits a significant change in carrier mobility at high gate voltages.

- **Problem 3: Non - linear current - voltage characteristics at high source - drain voltages**
- **Solution**: Explain the non - linear current - voltage characteristics at high source - drain voltages through the diffusion transport model. This model takes into account the spatial distribution of the induced carrier concentration in the channel and successfully fits the experimental data, indicating that there is no need to introduce the carrier velocity saturation mechanism in the case of low mobility.

### Key results

- The temperature coefficient of the RGO monolayer is \(-9.5\times10^{-4}\, \text{K}^{-1}\), which is consistent with that of mechanically exfoliated monolayer graphene.
- Under the action of the top - gate voltage, RGO exhibits ambipolar transport characteristics, and the carrier mobility is \(50 \, \text{cm}^2 \text{V}^{-1} \text{s}^{-1}\).
- The non - linear current - voltage characteristics at high source - drain voltages can be well explained by the diffusion transport model, in which the space - dependent induced carrier concentration is considered.

### Conclusion

This research shows that a large number of RGO - based FETs can be easily fabricated through dielectrophoresis technology, and these devices have good electrical properties. In particular, the non - linear current - voltage characteristics at high source - drain voltages can be accurately described by the diffusion transport model. This provides theoretical and technical support for the future development of RGO - based sensors and other electronic devices.