Abstract:Organic electronics have attracted intensive research interest in the past decades (Chen et al., 2020; Yao et al., 2020; Tang et al., 2021). The ever-increasing demand for organic electronics calls for the development of high-performance and high-stability organic thin-film transistors (OFETs). OFETs are considered key components to fabricate flexible and printable devices for promising applications, such as flexible displays, chemical sensors, wearable devices, and radio frequency identification (RFID) tags. The design and synthesis of novel structural materials (such as semiconductors, dielectrics, electrodes, and substrates), as well as the development of efficient interface engineering strategies, would further promote the development of flexible electronics and lay the foundation for their early commercialization (Ji et al., 2019; Ji et al., 2021). Despite remarkable progress in the development of new materials and relevant applications in organic electronics, some challenges remain, not only on the design and synthesis of novel structural materials (such as π-conjugated small molecule or polymer semiconductors, dielectrics, electrodes, and substrates), but also the development of efficient interface engineering strategies, for the fabrication of high-performance and high-stability devices, and eventually the realization of commercially available products. For example: 1) The need for new π-conjugated semiconductors (small molecule or polymer semiconductors) compatible with polymer dielectric for high-performance devices; 2) The need for polymer dielectric (chemical structures, polarity effects, etc) compatible with commonly used microfabrication technologies for highly integrated miniaturized devices (such as inverter, oscillator, etc); 3) The need for low-voltage and high-currentdensity high-performance devices (new transistor design or high dielectric constant insulators); 4) The strategies for large-scale device fabrication with uniform performance (new fabrication methods); 5) The need for high-stability devices (atmospheric, thermal). This Research Topic aims to address the above-mentioned challenges, including one Editorial, one Review and five Original research. The following themes will provide some clues to promote progress in this area. First of all, a novel photoactive semiconductor (named as IDTOT-4F) with an A-π-D-π-A-type configuration is synthesized for optoelectrical device with photo response and optical memory behaviors provided by W. Huang et al. Then, the development of new efficient interface engineering strategies (electrode approach by W. Li et al.; interface modification by T. Li et al.) for high-performance organic thin-film transistors. In addition, new methods for the construction of high-performance and high-stability organic thin-film transistors and relevant optoelectronic applications, which could be listed in the review article by L. Huang et al. and original research in the paper of W. Wang et al. Finally, X. Ren and co-workers reported a low-temperature solution process to fabricate a high-k metal oxide dielectric for low-power OFET applications. Edited and reviewed by: Liming Dai, Case Western Reserve University, United States

A design strategy for high-performance vertical organic field-effect transistors based on reduced graphene oxide electrodes

Vertical Organic Electrochemical Transistors for Complementary Circuits

Editorial: High-Performance Organic Thin-Film Transistors

Simulation study of various factors affecting the performance of Vertical Organic Field-Effect Transistors

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

High performance organic field effect transistors based on two-dimensional Vat orange 3 crystals

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Pure Graphene Oxide Vertical p–n Junction with Remarkable Rectification Effect

Influence of Injection Barrier on Vertical Organic Field Effect Transistors

Fabrication and evaluation of solution-processed reduced graphene oxide electrodes for p- and n-channel bottom-contact organic thin-film transistors

High-performance organic electrochemical transistors gated with 3D-printed graphene oxide electrodes

Low Operational Voltage and High Performance Organic Field Effect Memory Transistor with Solution Processed Graphene Oxide Charge Storage Media

High‐Density Vertical Transistors with Pitch Size Down to 20 nm

Face‐on Orientation Matches Vertical Organic Electrochemical Transistors for High Transconductance and Superior Non‐Volatility

Oxygen-Induced Barrier Lowering for High-Performance Organic Field-Effect Transistors

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer

Reduced graphene oxide with a highly restored π-conjugated structure for inkjet printing and its use in all-carbon transistors

Reduced Graphene Oxide Produced By Rapid-Heating Reduction And Its Use In Carbon-Based Field-Effect Transistors

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate