Influence of external electric field on electronic structure and optical properties of β-Ga 2 O 3 : a DFT study

Hao Wu,Cuihua Zhao,WenBo Zhao,Linji Li,Chengcheng Zhang

DOI: https://doi.org/10.1039/d3ra04119k

IF: 4.036

2023-01-01

RSC Advances

Abstract:The influence of different electric fields on the electronic structure and optical properties of β-Ga 2 O 3 was studied by GGA+ U method.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Effect of external electric field on morphology, structure and optical properties of β-Ga2O3 microstructures grown by CVD method

Shuang Zhao,Qiuju Feng,Chong Gao,Deyu Wang,Yan Xing,Jinzhu Xie,Zengjie Dong,Mengke Li,Hongwei Liang

DOI: https://doi.org/10.1016/j.mssp.2020.105142

IF: 4.1

2020-09-01

Materials Science in Semiconductor Processing

Abstract:Uniform and regularly arranged β-Ga2O3 microstructures were grown on patterned sapphire substrates (PSS) by the external electric field assisted chemical vapor deposition method at applied voltages in the range of 0–80 V. It was found that the voltage has a significant effect on the growth rate, surface morphology and crystalline quality of β-Ga2O3. When the external voltage increases, the β-Ga2O3 growth rate on the PSS increases and the crystal quality improves. When the external voltage is 80 V, a β-Ga2O3 thin film with high crystalline quality was obtained. Furthermore, the absorption spectra indicated that the absorption edge of the samples showed a blue shift with increasing external voltage. These results show that the crystal quality of the sample was improved after applying an external electric field.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Electronic structure, magnetism and optical properties of orthorhombic GdFeO3 from first principles

Xu-Hui Zhu,Xiang-Bo Xiao,Xiang-Rong Chen,Bang-Gui Liu

DOI: https://doi.org/10.1039/C6RA25259A

IF: 4.036

2017-01-01

RSC Advances

Abstract:Orthorhombic GdFeO3 has attracted considerable attention in recent years because its magnetic structure is similar to that of the well-known BiFeO3 material. Here, we investigate the electronic structure, magnetism and optical properties of orthorhombic GdFeO3 in terms of density-functional-theory calculations. The modified Becke-Johnson (mBJ) exchange potential is adopted to improve on the description of the electronic structure. Our calculations show that the G-type antiferromagnetic (G-AFM ordering of Fe spins) phase of orthorhombic GdFeO3 is stable compared to other magnetic phases. The semiconductor gap calculated with mBJ, substantially larger than that with GGA, is in good agreement with recent experimental values. Additionally, we also investigate the effects of spin–orbit coupling on the electronic structure, and calculate the complex dielectric functions and other optical functions of photon energy. The magnetic exchange interactions are also investigated, which gives a Neel temperature close to experimental observation. For confirming these mBJ results, we also study the electronic structure of rhombohedral (R3c) BiFeO3 with mBJ, obtaining good consistency with experiment. These lead to a satisfactory theoretical understanding of the electronic structure, magnetism and optical properties of orthorhombic GdFeO3 and can help elucidate the electronic structures and optical properties of other similar materials.
The calculated electronic and optical properties of β-Ga2O3 based on the first principles

Yan-Ru Wang,Zhi-Xin Bai,Qi-Jun Liu,Zheng-Tang Liu,Cheng-Lu Jiang

DOI: https://doi.org/10.1007/s00894-024-05907-2

IF: 2.172

2024-04-02

Journal of Molecular Modeling

Abstract:The electronic and optical properties of β-Ga2O3 have been investigated by CASTEP using first principles. It is found that β-Ga2O3 has an indirect band gap and the conduction band base is located at the Γ point. The stability of β-Ga2O3 is demonstrated by the calculation of elastic constants, and the ductility of β-Ga2O3 is demonstrated by the ratio of Poisson's ratio to shear modulus. The optical property analysis shows that β-Ga2O3 has a high absorption capacity in the ultraviolet region, but a low absorption capacity in visible and infrared light.

chemistry, multidisciplinary,biochemistry & molecular biology,biophysics,computer science, interdisciplinary applications
Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Xiaonan Wang,Jinfeng Yang,Penghua Ying,Zheyong Fan,Jin Zhang,Huarui Sun

DOI: https://doi.org/10.1063/5.0185854

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:The lattice thermal conductivity (LTC) of Ga2O3 is an important property due to the challenge in the thermal management of high-power devices. In this work, we develop machine-learned neuroevolution potentials (NEPs) for single-crystalline β−Ga2O3 and κ−Ga2O3 and demonstrate their accuracy in modeling thermal transport properties. Combining NEP-driven homogeneous non-equilibrium molecular dynamics simulations with tensor analysis, we determine the spatial distributions of LTCs for two Ga2O3 crystals, showing dissimilar thermal behaviors. Specifically, β−Ga2O3 shows isotropic thermal transport properties, with the LTCs along [100], [010], and [001] directions being predicted to be 10.3±0.2, 19.9±0.2, and 12.6±0.2 W/(m K), respectively, consistent with previous experimental measurements. For κ−Ga2O3, our predictions suggest nearly isotropic thermal transport properties, with the LTCs along [100], [010], and [001] being estimated to be 4.5±0.1, 3.9±0.1, and 4.0±0.1 W/(m K). The reduced LTC of κ−Ga2O3 vs β−Ga2O3 stems from its restricted low-frequency phonons up to 5 THz. Furthermore, we find that the β phase exhibits a typical temperature dependence slightly stronger than ∼T−1, whereas the κ phase shows a weaker temperature dependence, ranging from ∼T−0.5 to ∼T−0.7.
Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Kishor Upadhyaya,Vijay Kumar Gudelli,Wojciech Ogieglo,Hadeel Alamoudi,Fatimah Alreshidi,Iman S. Roqan

DOI: https://doi.org/10.1063/5.0212388

IF: 1.697

2024-07-01

AIP Advances

Abstract:We explore the effect of crystallographic anisotropy on the optical properties of high-quality β-Ga2O3 thin films by conducting experimental measurements and theoretical simulations. High resolution x-ray diffraction measurements confirm the high-quality and the single crystalline quality, ruling out the effect of defects for all films. Raman spectra reveal the presence of anisotropy, as evident from a stronger Bg(2) mode related to GaIO4 chain libration in (100) orientation. Conversely, a stronger Ag(10) mode corresponding to tetrahedral bonds is evident in the (010) orientation, while it is suppressed in the (100) orientation. Low-temperature photoluminescence spectra indicate the presence of intrinsic impurity-related emissions in the ultraviolet and blue regions for all films. An anisotropic bandgap is observed, wherein the lowest bandgap value is related to the (010) oriented sample. Spectroscopic ellipsometry measurements confirm different refractive indices and extinction coefficient values depending on crystallographic orientation, which are in good agreement with the theoretical values obtained by density functional theory, confirming the anisotropic characteristics. The theoretical calculations of charge density show that the strength of covalent bonding depends on the β-Ga2O3 orientation, while experimental findings demonstrate that as the covalent bonding character increases, the film bandgap and the refractive index decrease. The anisotropy of β-Ga2O3 with respect to the crystal orientation leads to variations in the extinction coefficient, refractive index, and bandgap energy.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Electric Field Effect of Gaas Monolayer from First Principles

Jiongyao Wu,Yali Yang,Heng Gao,Yuting Qi,Jiaqi Zhang,Zhenhua Qiao,Wei Ren

DOI: https://doi.org/10.1063/1.4979507

IF: 1.697

2017-01-01

AIP Advances

Abstract:Using first-principle calculations, we investigate two-dimensional (2D) honeycomb monolayer structures composed of group III-V binary elements. It is found that such compound like GaAs should have a buckled structure which is more stable than graphene-like flat structure. This results a polar system with out-of-plane dipoles arising from the non-planar structure. Here, we optimized GaAs monolayer structure, then calculated the electronic band structure and the change of buckling height under external electric field within density functional theory using generalized gradient approximation method. We found that the band gap would change proportionally with the electric field magnitude. When the spin-orbit coupling (SOC) is considered, we revealed fine spin-splitting at different points in the reciprocal space. Furthermore, the valence and conduction bands spin-splitting energies due to SOC at the K point of buckled GaAs monolayers are found to be weakly dependent on the electric field strength. Finally electric field effects on the spin texture and second harmonic generation are discussed. The present work sheds light on the control of physical properties of GaAs monolayer by the applied electric field.
Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

Linpeng Dong,Renxu Jia,Bin Xin,Bo Peng,Yuming Zhang

DOI: https://doi.org/10.1038/srep40160

IF: 4.6

2017-01-09

Scientific Reports

Abstract:The structural, electronic, and optical properties of β-Ga2O3 with oxygen vacancies are studied by employing first-principles calculations based on density function theory. Based on the defects formation energies, we conclude the oxygen vacancies are most stable in their fully charge states. The electronic structures and optical properties of β-Ga2O3 are calculated by Generalized Gradient Approximation + U formalisms with the Hubbard U parameters set 7.0 eV and 8.5 eV for Ga and O ions, respectively. The calculated bandgap is 4.92 eV, which is consistent with the experimental value. The static real dielectric constants of the defective structures are increased compared with the intrinsic one, which is attributed to the level caused by the Ga-4s states in the bandgap. Extra peaks are introduced in the absorption spectra, which are related to Ga-4s and O-2p states. Experimentally, β-Ga2O3 films are deposited under different O2 volume percentage with ratio-frequency magnetron sputtering method. The measured results indicate that oxygen vacancies can induce extra emission peaks in the photoluminescence spectrum, the location of these peaks are close to the calculated results. Extra O2 can increase the formation energies of oxygen vacancies and thus reduce oxygen vacancies in β-Ga2O3.

multidisciplinary sciences
Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Yuan Qin,Qiming He,Ming Liu,S. Long,Guangzhong Jian,Huiwen Xue,Hang Dong

DOI: https://doi.org/10.1088/1674-4926/40/1/011802

2019-01-01

Journal of Semiconductors

Abstract:As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.

Materials Science,Physics,Engineering
Comparative study on electronic properties of GaN nanowires by external electric field

Lei Liu,Feifei Lu,Jian Tian

DOI: https://doi.org/10.1016/j.mssp.2021.106015

IF: 4.1

2021-11-01

Materials Science in Semiconductor Processing

Abstract:<p>The electronic structure and optical properties of GaN nanowires under external electric fields with different directions and field intensities are studied via first-principles. The results show that the GaN nanowires under an electric field in the (001) direction is the most stable. The external electric field can adjust the band gap of GaN nanowires, and a further increase to the electric field intensity of 0.1 V/Å could suddenly reduce the band gap. Moreover, the GaN nanowires under the 0.2 V/Å field intensity exhibited the Stark effect. The application of an electric field could reduce the charge transfer between Ga atoms and N atoms in GaN nanowires. In addition, larger electric field intensity can reduce the absorption coefficient and reflectivity of GaN nanowires. These findings may provide valuable information for the development of field-assisted GaN nanowire photocathodes.</p>

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films

Yu-Che Ho,Gaihua Ye,Cynthia Nnokwe,Vladimir Kuryatkov,Juliusz Warzywoda,Luis Grave de Peralta,Rui He,Ayrton Bernussi

DOI: https://doi.org/10.1021/acsomega.3c10280

IF: 4.1

2024-07-09

ACS Omega

Abstract:β-Crystalline phase gallium oxide (β-Ga(2)O(3)) is an ultrawide bandgap material with prospective applications in electronics and deep ultraviolet (DUV) optoelectronics and optics. The monoclinic crystal structure of β-Ga(2)O(3) results in optical anisotropy to incident light with different polarization states. This attribute can lead to different optical applications in the DUV. In this article, we investigated the optical properties of β-Ga(2)O(3) thin films grown by pulsed laser deposition...

chemistry, multidisciplinary
The effect of vacancy defects on the electronic properties of β-Ga2O3

Xiaomin He,Meng Wang,Jiaqi Meng,Jichao Hu,Yuquan Jiang

DOI: https://doi.org/10.1016/j.commatsci.2022.111777

IF: 3.572

2022-12-01

Computational Materials Science

Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

materials science, multidisciplinary
Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3

H. Zeng,C. Ma,M. Wu

DOI: https://doi.org/10.1063/5.0225275

IF: 1.697

2024-08-01

AIP Advances

Abstract:Two-dimensional (2D) Ga2O3 has been of particular interest recently since it exhibits overwhelming superiority over bulk β-Ga2O3; however, efforts to modify the carriers of 2D Ga2O3 are few both theoretically and experimentally. In this work, we study the biaxial strain mediated electronic structures and transport properties of Ge-doped 2D Ga2O3 using first-principles calculations with Perdew–Burke–Ernzerhof functional and Boltzmann transport theory. The Ge-doped Ga2O3 shows excellent structure stability as suggested by its low formation energy of −3.99 eV, as well as phonon dispersion analysis and ab initio molecular dynamic simulation. The bandgap values of Ge-doped 2D Ga2O3 are tunable from 2.37 to 1.30 eV using biaxial strain from −8% compressive to +8% tensile because of the changeable σ* anti-bonding and π bonding states in the conduction band minimum and valence band maximum, respectively, as well as the decreased quantum confinement effect. Importantly, an ultra-high electron mobility up to 6893.43 cm2 V−1 s−1 is predicated in Ge-doped 2D Ga2O3 as the biaxial tensile strain approaches 8%. Our work highlights the enormous potential of Ge-doped 2D Ga2O3 in nanoscale electronics and suggests that Ge is an excellent dopant candidate toward optoelectronic applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

Wenxiang Mu,Xuanhu Chen,Gaohang He,Zhitai Jia,Jiandong Ye,Bo Fu,Jin Zhang,Sunan Ding,Xutang Tao

DOI: https://doi.org/10.1016/j.apsusc.2020.146648

IF: 6.7

2020-10-01

Applied Surface Science

Abstract:As a deep ultraviolet transparent conducting semiconductor, β-Ga2O3 has been actively studied for short wavelength optical and optoelectronic applications. This study investigated the anisotropy of optical properties, valence band structures, and the in-plane angle-resolved transmittance spectra of the three main crystal planes. The optical bandgaps of unintentionally doped β-Ga2O3 (100), (010), and (001) planes were 4.70, 4.55, and 4.70 eV, respectively. The valence band maximum of the (100), (010), and (001) planes obtained by VB-XPS were 3.4, 3.3, and 3.4 eV, respectively. A 0.05 eV larger surface bending band was found in the (100) and (001) planes than in the (010) plane. The transmitted intensity was established as a function of the in-plane polarization angles. The polarized optical bandgaps of E//a, E//b, and E//c were fit to 4.58, 4.73, and 4.48 eV, respectively, indicating that β-Ga2O3 can be used in polarization filtering and spectrally selective photodetectors in the UVC band, which was also demonstrated using two vertically stacked (100) single crystal wafers.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Prashanth Gopalan,Sean Knight,Ashish Chanana,Megan Stokey,Praneeth Ranga,Michael A.Scarpulla,Sriram Krishnamoorthy,V. Darakchieva,Zbigniew Galazka,Klaus Irmscher,Andreas Fiedler,Steve Blair,Mathias Schubert,Berardi Sensale-Rodriguez

DOI: https://doi.org/10.48550/arXiv.2010.03107

2020-10-07

Abstract:The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices

Materials Science,Optics
Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Moritz Meißner,Nils Bernhardt,Felix Nippert,Benjamin M. Janzen,Zbigniew Galazka,Markus R. Wagner

DOI: https://doi.org/10.1063/5.0189751

IF: 4

2024-04-08

Applied Physics Letters

Abstract:The monoclinic beta-phase of gallium oxide possesses an ultra-wide bandgap that surpasses other wide bandgap materials such as SiC and GaN, making it a promising candidate for power electronic device technologies. We investigate the first fundamental optical transitions in this material, which exhibit a strong directional dependence. To determine the energies and orientations of these transitions, temperature-dependent and angular resolved photoluminescence excitation spectroscopy is applied. We observe a distinct excitation channel located energetically between those of the first two optical transitions Γ1−1 and Γ1−2. While previous absorption edge and reflectance spectroscopy studies have assigned a transition in this spectral range to either the Γ1−1 or the Γ1−2 transition, our findings demonstrate no pronounced polarization dependence of this excitation channel within the (010) plane, an observation not reflected in calculations of the band-to-band transitions in β-Ga2O3.

physics, applied
Exploring the Crystal Structure and Electronic Properties of γ-Al2O3: Machine Learning Drives Future Material Innovations

Zhenyu Bu,Yun Xue,Xiaoqin Zhao,Guang Liu,Yulong An,Huidi Zhou,Jianmin Chen

DOI: https://doi.org/10.1021/acsami.4c10774

2024-11-06

Abstract:For decades, researchers have struggled to determine the precise crystal structure of γ-Al2O3 due to its atomic-level disorder and the challenges associated with obtaining high-purity, high-crystallinity γ-Al2O3 in laboratory settings. This study investigates the crystal structure and electronic properties of γ-Al2O3 coatings under the influence of an external electric field, integrating machine learning with density functional theory (DFT). A potential 160-atom supercell structure was identified from over 600,000 γ-Al2O3 configurations and confirmed through high-resolution transmission electron microscopy and selected area electron diffraction. The findings indicate that γ-Al2O3 deviates from the conventional spinel structure, suggesting that octahedral vacancies can reduce the system's energy. Under an external electric field, the material's band structure and density of states (DOS) undergo significant changes: the bandgap narrows from 3.996 to 0 eV, resulting in metallic behavior, while the projected density of states (PDOS) exhibits peak broadening and splitting of oxygen atom PDOS below the Fermi level. These alterations elucidate the variations in the electrical conductivity of alumina coatings under an electric field. These findings clarify the mechanisms of γ-Al2O3's electronic property modulation and offer insights into its covalent and ionic mixed bonding as a wide-bandgap semiconductor. This discovery is essential for understanding dielectric breakdown in insulating materials.
Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Zeming Li,Teng Jiao,Wancheng Li,Zengjiang Wang,Yuchun Chang,Rensheng Shen,Hongwei Liang,Xiaochuan Xia,Guoqiang Zhong,Yu Cheng,Fanlong Meng,Xin Dong,Baolin Zhang,Yan Ma,Guotong Du

DOI: https://doi.org/10.1016/j.apsusc.2024.159327

IF: 6.7

2024-04-01

Applied Surface Science

Abstract:β gallium oxide (β-Ga2O3) is an ultrawide bandgap semiconductor with great potential for solar-blind ultraviolet detection, power devices, and gas sensing. However, the understanding of the surface properties of β-Ga2O3 remains insufficient. Here, epitaxial growth of β-Ga2O3 films was carried by metal–organic chemical vapor deposition (MOCVD) on sapphire substrates. The surface chemical composition, surface layer crystalline properties, and surface morphology of the β-Ga2O3 films were discussed and analyzed in detail. By comparing the atomic ratios of O/Ga, the surface morphology, and the crystalline properties of the films, we attribute the component of O 1s with the binding energy around 531.8 eV to surface lattice O atoms. Moreover, the one-dimensional defects inside the surface layers and the near-interface regions of the films were observed at atomic scale by high resolution transmission electron microscopy (HRTEM). By comparing the lattice fringes of different facets, the geometric phase uniformity, and the distribution of strain, we found that the crystalline quality of the surface layers is much higher than the near-interface regions.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Anisotropic optical and electric properties of β-gallium oxide

Yonghui Zhang,Fei Xing

DOI: https://doi.org/10.1088/1674-4926/44/7/071801

2023-07-23

Journal of Semiconductors

Abstract:The anisotropic properties and applications of β-gallium oxide (β-Ga 2 O 3 ) are comprehensively reviewed. All the anisotropic properties are essentially resulted from the anisotropic crystal structure. The process flow of how to exfoliate nanoflakes from bulk material is introduced. Anisotropic optical properties, including optical bandgap, Raman and photoluminescence characters are comprehensively reviewed. Three measurement configurations of angle-resolved polarized Raman spectra (ARPRS) are reviewed, with Raman intensity formulas calculated with Raman tensor elements. The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced. In addition, the anisotropy in electron mobility and affinity are discussed. The applications, especially polarization photodetectors, based on β-Ga 2 O 3 were summarized comprehensively. Three kinds of polarization detection mechanisms based on material dichroism, 1D morphology and metal-grids are discussed in-depth. This review paper provides a framework for anisotropic optical and electric properties of β-Ga 2 O 3 , as well as the applications based on these characters, and is expected to lead to a wider discussion on this topic.

physics, condensed matter
Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Zhi-Hai Zhang,Jian-Hui Yuan

DOI: https://doi.org/10.1016/j.physe.2022.115594

2023-03-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:In this paper, we analytically study the effect of applied electric field on energy levels and optical properties of a Gaussian confinement quantum dot(QD). The second harmonic generation(SHG), linear and nonlinear optical absorption coefficients(OACs) have been obtained in the way of the compact density matrix and iterative approach. In the one electron approximation, we take into account all possible transition routes, which contribute to the SHG and OACs. The results show that the energy levels and nonlinear optical properties of the dot depend strongly on the applied electric field. Especially, the effects on the SHG and OACs are obviously different contributed by different transition routes. The overall results show that geometric parameters of the Gaussian confinement QD and applied electric field act a very important role in the electronic and optical properties of QD, which maybe play a vital role in related research fields.

physics, condensed matter,nanoscience & nanotechnology
Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Jun Zhang,Junlei Zhao,Junting Chen,Mengyuan Hua

DOI: https://doi.org/10.1063/5.0177093

IF: 4

2024-01-08

Applied Physics Letters

Abstract:β-Ga2O3 has been subjected to intense research interest as an ultrawide bandgap semiconductor. The epitaxial growth technique of β-Ga2O3 thin films plays a fundamental and vital role in Ga2O3-based device fabrication. In this work, the epitaxial growth mechanisms of β-Ga2O3 on four low-Miller-index facets, (100), (010), (001), and (2 ̄01), are systematically explored using large-scale machine-learning molecular dynamics simulations at the atomic scale. The simulations reveal that the migration of the face-centered cubic stacking O sublattice plays a dominant role in the different growth mechanisms between the (100)/(010)/(001) and (2 ̄01) orientations. The resultant complex combinations of the stacking faults and twin boundaries are carefully identified and show good agreement with experimental observations and ab initio calculations. Our results provide useful insights into the gas-phase epitaxial growth of β-Ga2O3 thin films and suggest possible ways to tailor its properties for specific applications.

physics, applied

Influence of external electric field on electronic structure and optical properties of β-Ga 2 O 3 : a DFT study

Effect of external electric field on morphology, structure and optical properties of β-Ga2O3 microstructures grown by CVD method

Electronic structure, magnetism and optical properties of orthorhombic GdFeO3 from first principles

The calculated electronic and optical properties of β-Ga2O3 based on the first principles

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Identifying orientation-dependent optical properties of single-crystalline β-Ga2O3 films

Electric Field Effect of Gaas Monolayer from First Principles

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material

Comparative study on electronic properties of GaN nanowires by external electric field

Deep Ultraviolet Optical Anisotropy of β-Gallium Oxide Thin Films

The effect of vacancy defects on the electronic properties of β-Ga2O3

Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3

Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Anisotropy of optical transitions in β - Ga2O3 investigated by polarized photoluminescence excitation spectroscopy

Exploring the Crystal Structure and Electronic Properties of γ-Al2O3: Machine Learning Drives Future Material Innovations

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Anisotropic optical and electric properties of β-gallium oxide

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth