Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band
Wenxiang Mu,Xuanhu Chen,Gaohang He,Zhitai Jia,Jiandong Ye,Bo Fu,Jin Zhang,Sunan Ding,Xutang Tao
DOI: https://doi.org/10.1016/j.apsusc.2020.146648
IF: 6.7
2020-10-01
Applied Surface Science
Abstract:As a deep ultraviolet transparent conducting semiconductor, β-Ga2O3 has been actively studied for short wavelength optical and optoelectronic applications. This study investigated the anisotropy of optical properties, valence band structures, and the in-plane angle-resolved transmittance spectra of the three main crystal planes. The optical bandgaps of unintentionally doped β-Ga2O3 (100), (010), and (001) planes were 4.70, 4.55, and 4.70 eV, respectively. The valence band maximum of the (100), (010), and (001) planes obtained by VB-XPS were 3.4, 3.3, and 3.4 eV, respectively. A 0.05 eV larger surface bending band was found in the (100) and (001) planes than in the (010) plane. The transmitted intensity was established as a function of the in-plane polarization angles. The polarized optical bandgaps of E//a, E//b, and E//c were fit to 4.58, 4.73, and 4.48 eV, respectively, indicating that β-Ga2O3 can be used in polarization filtering and spectrally selective photodetectors in the UVC band, which was also demonstrated using two vertically stacked (100) single crystal wafers.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films